Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer  

作　　者：Hao Huang Hongming Guan Meng Su Xiaoyue Zhang Yuan Liu Chuansheng Liu Zhihong Zhang Kaihui Liu Lei Liao Ning Tang 

机构地区：[1]School of Physics and Technology,Wuhan University,Wuhan,430072,China [2]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing,100871,China [3]Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,School of Physics and Electronics,Hunan University,Changsha,410082,China

出　　处：《Nano Research》2021年第6期1814-1818,共5页纳米研究（英文版）

基　　金：the National Key Research and Development Program of China(No.2018YFB0406603);the National Natural Science Foundation of China(Nos.61574006,61522401,61927806,61521004,11634002,and U1632156);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB30000000).

摘　　要：Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

关 键 词：molybdenum disulfide(MoS2) contact linear magnetoresistance graphene insertion layer mobility 

分 类 号：TN32[电子电信—物理电子学] TQ127.11[化学工程—无机化工]