Emerging low-dimensional materials for mid-infrared detection  

作　　者：Jiangbin Wu Nan Wang Xiaodong Yan Han Wang 

机构地区：[1]Ming Hsieh Department of Electrical and Computer Engineering,University of Southern California,Los Angeles,CA,90089,USA [2]Mork Family Department of Chemical Engineering and Material Science,University of Southern California,Los Angeles,CA,90089,USA

出　　处：《Nano Research》2021年第6期1863-1877,共15页纳米研究（英文版）

基　　金：the support from Army Research Office(No.W911NF1910111).

摘　　要：Mid-infrared(IR)detectors based on the emerging low-dimensional(two-dimensional and quasi one-dimensional)materials offer unique characteristics including large bandgap tunability,optical polarization sensitivity and integrability with typical silicon process,which are not available in the mid-IR detectors based on traditional compound semiconductors.Here,we review the recent progress in study of mid-IR detectors based on the low-dimensional materials,including black phosphorus,black arsenic phosphorus,tellurene and BaTiS3,from the perspectives of crystal structure,material synthesis,optical properties,and the detector characteristics.The detector gain and detectivity are benchmarked,and the unique properties,such as the polarization sensitivity,are discussed.We also provide our perspective about key future research directions in this field.

关 键 词：mid-infrared detector ANISOTROPY LOW-DIMENSIONAL GAIN DETECTIVITY 

分 类 号：TN15[电子电信—物理电子学]