Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited]  

作　　者：Le Jiang Xi Luo Zhongming Luo Dingjian Zhou Baoxing Liu Jincheng Huang Jianfeng Zhang Xulin Zhang Ping Xu Guijun Li 江乐;罗溪;罗钟明;周定坚;刘宝星;黄金成;张建锋;张旭琳;徐平;李贵君(College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China;College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China [2]College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China

出　　处：《Chinese Optics Letters》2021年第3期1-7,共7页中国光学快报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (No. 61804097);the Natural Science Foundation of Guangdong Province (No. 2020A1515010792);the Science and Technology Program of Shenzhen (No. SGDX20190918105001787)。

摘　　要：Halide perovskites have attracted great attention due to their high color purity, high luminance yield, low non-radiative recombination rate, and solution processability. Although the external quantum efficiency of perovskite light-emitting diodes(Pe LEDs) is comparable with that of the organic light-emitting diodes(OLEDs) and quantum-dots light-emitting diodes(QLEDs), the brightness is still low compared with the traditional OLEDs and QLEDs. Herein, we demonstrate high brightness and high-efficiency Cs Pb Br3-based Pe LEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer. The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology. As a result, Pe LEDs with a high brightness of 64756 cd/m2 and an external quantum efficiency of 13.4% have been achieved.

关 键 词：PEROVSKITE light-emitting diodes morphology engineering ETHANOLAMINE polyethylene glycol 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN312.8[电子电信—物理电子学]