Stable and high performance all-inorganic perovskite light-emitting diodes with anti-solvent treatment  

作　　者：Sajid Hussain Ahmad Raza Fawad Saeed Abida Perveen Yan Sikhai Nasrud Din Elias EElemike 黄倩倩 Alagesan Subramanian Qasim Khan 雷威 

机构地区：[1]Joint International Laboratory of Information Display and Visualization,School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China [2]Chemistry Department,North West University,Mafikeng,South Africa [3]Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518000,China

出　　处：《Chinese Optics Letters》2021年第3期27-31,共5页中国光学快报（英文版）

基　　金：financially supported by the National Key Research and Development Program of China (Nos. 2018YFE0125500 and 2016YFB0401600);Program 1112.0 in China (BP0719013), National Natural Science Foundation of China (Nos. 61775034, 51879042, 61674029, and 12005038);Research Fund for International Young Scientists (No. 62050410350);International Cooperative Research Project of Jiangsu Province (No. BZ2018056);Leading Technology of Jiangsu Basic Research Plan (No. BK20192003);Aeronautical Science Foundation of China (No. 201951069001);Jiangsu Province College Graduate Research Innovation Program (No. KYLX160213)。

摘　　要：Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes(Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd · m-2 maximum brightness, 45.8 cd · A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.

关 键 词：CsPbBr3 light-emitting diode solvent treatment charge-carrier injection perovskite LED 

分 类 号：TN312.8[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]