Enhanced thermoelectric performance in Cl-doped BiSbSe_(3) with optimal carrier concentration and effective mass  

作　　者：Sining Wang Lizhong Su Yuting Qiu Yu Xiao Li-Dong Zhao 

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing 100191,China [2]Beihang School,Beihang University,Beijing 100191,China

出　　处：《Journal of Materials Science & Technology》2021年第11期67-72,共6页材料科学技术（英文版）

基　　金：supported financially by the National Natural Science Foundation of China(Nos.51772012 and 51671015);the National Key Research and Development Program of China(Nos.2018YFB0703600 and 2018YFA0702100);the Beijing Natural Science Foundation(No.JQ18004);the Shenzhen Peacock Plan Team(No.KQTD2016022619565991);111 Project(No.B17002);financial support from Postdoctoral Science Foundation of China(No.2019M660399);the National Postdoctoral Program for Innovative Talents(No.BX20190028);support from the National Science Fund for Distinguished Young Scholars(No.51925101)。

摘　　要：Possessing inherently low thermal conductivity,BiSbSe_(3) is a promising thermoelectric material for medium temperature.Therefore,to substantially optimize the thermoelectric performance of BiSbSe_(3),researchers mainly focus on the strategies to improve its electrical transport properties.Among these strongly coupled thermoelectric parameters,carrier concentration and effective mass are two intrinsic variables to decisively affect the electrical transport properties.In this work,Cl as a donor dopant is effective to provide extra electrons in n-type BiSbSe_(3),and the carrier concentration and effective mass can be well optimized simultaneously with increasing Cl content owing to the multiple conduction bands in BiSbSe_(3).What’s more,maximum weighted mobility~53 cm^(2)V^(-1)s^(-1)is obtained in Cl-doped BiSbSe_(3),which contributes to a largely enhanced power factor~4.8μW cm^(-1)K^(-2)at room temperature and outperforms other halogen-doped BiSbSe_(3) samples.Finally,combining the significantly enhanced power factor and maintained low thermal conductivity,a maximum ZT~1.0 is achieved in Cl-doped BiSbSe_(3) at 800 K.

关 键 词：BiSbSe_(3) Thermoelectric performance Effective mass Carrier concentration 

分 类 号：TB34[一般工业技术—材料科学与工程]