一种易烧写高可靠的硅化物多晶熔丝修调电路  

An Easily Blowing and Highly Reliable Silicided Polysilicon Fuse Trimming Circuit

作　　者：张琳[1] 李静[1] 付东兵[1] 万贤杰 丁一 ZHANG Lin;LI Jing;FU Dongbing;WAN Xianjie;DING Yi(The 24th Research Institute of China Electronics Technology Group Corp.,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第2期221-224,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61704161)。

摘　　要：多晶硅熔丝是一种单次可编程(OTP)的非易失存储单元,常用于集成电路的修调,确保电路在PVT下性能稳定。对传统熔丝修调电路进行了改进,设计了一种常规修调电压下高可靠的硅化物多晶熔丝修调电路。该电路具有功耗低、易扩展和复用性强等优点。基于0.25μm CMOS工艺流片测试,该电路在3.3 V电压下实现了14位DAC高31位温度计码恒流源的修调。Polysilicon fuses are one time programmable non-volatile memory elements which are allowed to calibrate the integrated circuits to assure the circuit’s performance stability at PVT corners. Based on the improvement of a traditional architecture of fuse trimming circuit, a kind of highly reliable silicided polysilicon fuse trimming circuit under normal blowing voltage was designed, which benefited from low power consume, easy to expand and strong versatility. This fuse trimming circuit was fabricated in a 0.25 μm CMOS process. The tested results showed that, under 3.3 V blowing voltage, the fuse trimming of 14 bit DAC’s high 31 thermometer current sources was successful.

关 键 词：熔丝修调 硅化物多晶硅 匹配设计 

分 类 号：TN432[电子电信—微电子学与固体电子学]