Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method  

作　　者：Jianbai Xia 

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Journal of Semiconductors》2021年第6期11-12,共2页半导体学报（英文版）

摘　　要：Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s[1,2].

关 键 词：DOPING ULTRAVIOLET BAND 

分 类 号：TN304[电子电信—物理电子学]