A review of manufacturing technologies for silicon carbide superjunction devices  

作　　者：Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan 

机构地区：[1]Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China [3]University of Electronic Science and Technology of China,Chengdu 610054,China [4]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2021年第6期19-24,共6页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program(No.2016YFB0400500);the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。

摘　　要：Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.

关 键 词：silicon carbide(SiC) power semiconductor devices superjunction(SJ) process development 

分 类 号：TN386[电子电信—物理电子学]