Heavily doped silicon:A potential replacement of conventional plasmonic metals  

作　　者：Md.Omar Faruque Rabiul Al Mahmud Rakibul Hasan Sagor 

机构地区：[1]Islamic University of Technology(IUT),Board Bazar Gazipur,Gazipur 1704,Bangladesh

出　　处：《Journal of Semiconductors》2021年第6期35-40,共6页半导体学报（英文版）

摘　　要：The plasmonic property of heavily doped p-type silicon is studied here.Although most of the plasmonic devices use metal-insulator-metal(MIM)waveguide in order to support the propagation of surface plasmon polaritons(SPPs),metals that possess a number of challenges in loss management,polarization response,nanofabrication etc.On the other hand,heavily doped p-type silicon shows similar plasmonic properties like metals and also enables us to overcome the challenges possessed by metals.For numerical simulation,heavily doped p-silicon is mathematically modeled and the theoretically obtained relative permittivity is compared with the experimental value.A waveguide is formed with the p-silicon-air interface instead of the metal-air interface.Formation and propagation of SPPs similar to MIM waveguides are observed.

关 键 词：alternative plasmonic material heavily doped p-silicon surface plasmon polaritons 

分 类 号：TN304.12[电子电信—物理电子学]