磁性随机存储器的发展及其缓存应用  

Development and Cache Application of Magnetoresistive Random Access Memory

作　　者：常亮[1] 赵鑫[2] 邓翔龙 姜钰婕 杨思琪 周军[1] CHANG Liang;ZHAO Xin;DENG Xiang-long;JIANG Yu-jie;YANG Si-qi;ZHOU Jun(University of Electronic Science and Technology of China;China University of Mining and Technology)

机构地区：[1]电子科技大学 [2]中国矿业大学

出　　处：《中国集成电路》2021年第6期38-44,84,共8页China lntegrated Circuit

基　　金：国家重点研发计划(项目号:2019YFB2204500);电子科技大学人才启动基金(项目号:Y030202059018052)。

摘　　要：随着半导体工艺的进步,晶体管尺寸不断缩小,阈值电压随之下降,传统静态随机存储器的静态功耗逐渐成为系统的瓶颈。而新兴的磁性随机存储器由于具有密度高、极低的漏电流、非易失等特性,成为了后摩尔时代解决静态功耗作为工作存储器的有力竞争者。基于此,本文介绍了MRAM的特性,调研了近三年的MRAM芯片研究成果,重点阐述了MRAM应用于处理器中多级缓存的情况。最后,本文提出了基于非易失存储器的评估工具,实现对缓存性能的评估。As the technology of CMOS scaling down,the size of the transistor becomes much smaller with threshold voltage decreasing.The static power of static random-access memory(SRAM)is a bottleneck of the processor.Recently,the emerging Magnetoresistive Random-Access Memory(MRAM)has become a promising solution to replace the SRAM as working memory in post-Moore era,thanks to its high density,ultra-low static power consumption and nonvolatility.In this paper,we investigate characteristics of MRAM and tape-out works on MRAM in recent three years.We introduce several works employing MRAM as multi-level caches.In addition,we develop an evaluation platform to get the performance of MRAM-based cache structure.

关 键 词：低功耗 非易失存储器 磁性随机存储器 缓存 性能评估 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]