High performance infrared detectors compatible with CMOS-circuit process  

作　　者：Chao Wang Ning Li Ning Dai Wang-Zhou Shi Gu-Jin Hu He Zhu 王超;李宁;戴宁;石旺舟;胡古今;朱贺(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou 213164,China;Department of Physics,College of Mathematics and Science,Shanghai Normal University,Shanghai 200234,China;Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China [4]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou 213164,China [5]Department of Physics,College of Mathematics and Science,Shanghai Normal University,Shanghai 200234,China [6]Hangzhou Dianzi University,Hangzhou 310018,China

出　　处：《Chinese Physics B》2021年第5期293-296,共4页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.11933006,61805060,and 61290304).

摘　　要：A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current(DC)bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5×10^(13)cm·Hz^(1/2)/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.

关 键 词：Si:P long wavelength detectors blocked impurity band TERAHERTZ 

分 类 号：TN215[电子电信—物理电子学]