High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film  

作　　者：Yu-Song Zhi Wei-Yu Jiang Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang 支钰崧;江为宇;刘增;刘媛媛;褚旭龙;刘佳航;李山;晏祖勇;王月晖;李培刚;吴真平;唐为华(Laboratory of Information Functional Materials and Devices,School of Science&State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;The Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;China Aerospace System Simulation Technology Co.,Ltd.(Beijing),Beijing 100195,China;College of Electronic and Optical Engineering&College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]Laboratory of Information Functional Materials and Devices,School of Science&State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]The Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]China Aerospace System Simulation Technology Co.,Ltd.(Beijing),Beijing 100195,China [5]College of Electronic and Optical Engineering&College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

出　　处：《Chinese Physics B》2021年第5期595-601,共7页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033);the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT);the Fundamental Research Funds for the Central Universities,China.

摘　　要：Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

关 键 词：Si-dopedβ-Ga_(2)O_(3) metal-organic chemical vapor deposition(MOCVD) solar-blind high responsivity 

分 类 号：TQ133.51[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程] TN23[电子电信—物理电子学]