Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature  

作　　者：Yu Fu Rui-Min Xu Xin-Xin Yu Jian-Jun Zhou Yue-Chan Kong Tang-Sheng Chen Bo Yan Yan-Rong Li Zheng-Qiang Ma Yue-Hang Xu 付裕;徐锐敏;郁鑫鑫;周建军;孔月婵;陈堂胜;延波;李言荣;马正强;徐跃杭(University of Electronic Science and Technology of China,Chengdu 611731,China;Nanjing Electronic Devices Institute,Nanjing 210016,China;Sichuan University,Chengdu 610041,China;University of Wisconsin-Madison,Madison,WI 53705,USA)

机构地区：[1]University of Electronic Science and Technology of China,Chengdu 611731,China [2]Nanjing Electronic Devices Institute,Nanjing 210016,China [3]Sichuan University,Chengdu 610041,China [4]University of Wisconsin-Madison,Madison,WI 53705,USA

出　　处：《Chinese Physics B》2021年第5期661-666,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.61922021);the National Key Research and Development Project,China(Grant No.2018YFE0115500);the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration,China.

摘　　要：The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device performance.In this paper,we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric processes.The devices use Al_(2)O_(3) as gate dielectrics that are deposited via atomic layer deposition(ALD)at 80℃and 300℃,respectively,and their C-V and I-V characteristics are comparatively investigated.Mott-Schottky plots(1/C2-VG)suggest that positive and negative fixed charges with low density of about 10^(11)cm^(-2) are located in the 80-℃-and 300-℃deposition Al2O3 films,respectively.The analyses of direct current(DC)/pulsed I-V and frequency-dependent conductance show that the shallow interface traps(0.46 eV-0.52 eV and 0.53 eV-0.56 eV above the valence band of diamond for the 80-℃and 300-℃deposition conditions,respectively)with distinct density(7.8×10^(13)eV^(-1)·cm^(-2)-8.5×10^(13)eV^(-1)·cm^(-2) and 2.2×10^(13)eV^(-1)·cm^(-2)-5.1×10^(13)eV^(-1)·cm^(-2) for the 80-℃-and 300-℃-deposition conditions,respectively)are present at the Al2O3/C-H diamond interface.Dynamic pulsed I-V and capacitance dispersion results indicate that the ALD Al_(2)O_(3) technique with 300-℃deposition temperature has higher stability for C-H diamond MOSFETs.

关 键 词：diamond MOSFET ALD temperature pulsed I-V interface trap conductance method 

分 类 号：TN386[电子电信—物理电子学] TQ163[化学工程—高温制品工业]