不同退火温度对钡铁氧体薄膜磁性的影响  

Influence of Different Annealing Temperatures on the Magnetic Properties of Barium Ferrite Films

作　　者：张纬统 代波[1] 任勇[1] 倪经[2] ZHANG Weitong;DAI Bo;REN Yong;NI Jing(State Key Laboratory of Environment-Friendly Energy Materials,School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,China;Southwest Institute of Applied Magnetics,Mianyang 621000,China)

机构地区：[1]西南科技大学材料科学与工程学院,环境友好能源材料国家重点实验室,绵阳621010 [2]西南应用磁学研究所,绵阳621000

出　　处：《人工晶体学报》2021年第5期845-850,共6页Journal of Synthetic Crystals

基　　金：西南科技大学环境友好能源材料国家重点实验室资助项目(20fksy23)。

摘　　要：M型钡铁氧体(BaFe_(12)O_(19),BaM)是一种单轴磁晶各向异性的六角晶系硬磁材料,由于其具有很强的各向异性场,因此在自偏置微波器件领域具有广阔的应用前景。本文采用常温射频磁控溅射法在(000 l)取向的蓝宝石衬底上沉积了厚度约为130 nm的BaFe_(12)O_(19)非晶薄膜,然后分别在850℃、900℃、950℃、1000℃对其空气退火处理3 h,得到BaM晶体薄膜样品。采用X射线衍射仪对薄膜样品进行物相及晶体生长取向鉴别,采用扫描探针显微镜和扫描电子显微镜对薄膜样品的粗糙度和表面形貌进行测量和观察,采用振动样品磁强计对样品进行了静态磁性能测试。实验结果表明,退火后的薄膜样品的主晶相为BaM,且具有(000 l)取向择优生长,其微观组织结构都表现为C轴垂直于膜面的颗粒状结构。退火温度为900℃时所得样品的各项性能达到最佳,其表面粗糙度为2.8 nm,矩形比为0.84,饱和磁化强度为247 emu/cm^(3),矫顽力为1528 Oe。M-type barium ferrite(BaFe_(12)O_(19),BaM)is a kind of uniaxial magnetocrystalline anisotropic hexagonal crystal system hard magnetic material.Because of strong magnetocrystalline anisotropy,it has broad application prospects in the field of self-biased microwave devices.In this paper,the normal temperature RF magnetron sputtering method was used to deposit a BaFe_(12)O_(19) amorphous film with a thickness of about 130 nm on a sapphire(000 l)substrate.Then they were annealed at 850℃,900℃,950℃,and 1000℃for 3 h to obtain BaM crystal film samples.X-ray diffraction method is used to identify the phase and crystal growth orientation of the film sample.The roughness and surface morphology of the film sample are measured and observed using a scanning probe microscope and a scanning electron microscope.X-ray diffraction results show that the main crystal phases of BaM are grown along the(000 l)orientation,which is contributed by two factors:(1)suitable RF sputtering power and pressure;(2)BaM and sapphire have the same hexagonal.The crystal structure and the matching degree of unit cell parameters are relatively high,which can induce the crystal grain orientation of the film.When the annealing temperature reaches 950℃,the film begins to show the diffraction peaks of non-BaM crystal phase,indicating that excessive annealing temperature will cause the generation of impurity phases.When the annealing temperature is 900℃,the surface microstructure shows uniform grain size and clear interface.At 850℃,there are a small number of slender needle-like structures on the surface of the film.At 950℃,the morphology of the crystal grains transforms into large flaky particles.A sharp uplifted structure appears at the grain boundary.The flaky grain structure is the crystal grains with the C axis perpendicular to the film surface,and the needle-like structure is the random orientation of the C axis in the BaM plane,the sharp warped structure may be due to the miscellaneous phases caused by grain boundary segregation.The ne

关 键 词：钡铁氧体 薄膜 射频磁控溅射 退火 磁性 

分 类 号：TM277[一般工业技术—材料科学与工程]