Er^(3+)掺杂对ZnO/GaN发光二极管电致发光性能的调控  

Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er^(3+) Doping

作　　者：刘威 李竹新 王俊洁 石增良[1] LIU Wei;LI Zhu-xin;WANG Jun-jie;SHI Zeng-liang(State Key Laboratory of Bioelectronics,School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China)

机构地区：[1]东南大学生物科学与医学工程学院生物电子学国家重点实验,江苏南京210096

出　　处：《发光学报》2021年第6期863-870,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(11734005,61821002,62075041);国家重点研发计划(2018YFA0209101,2017YFA0700500)资助项目。

摘　　要：采用水热法制备了Er^(3+)掺杂的ZnO纳米棒阵列,通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明,掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变,Er^(3+)被均匀地掺杂至ZnO纳米棒中,并未发现形成Er_(2)O_(3);掺杂Er^(3+)后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少,其可见光占比减少归因于Er^(3+)填补了一部分锌空位缺陷,同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长,表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管,与未掺杂Er^(3+)的样品相比,其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。Er3+doped ZnO nanorod arrays were prepared by hydrothermal method,the morphology and luminescence properties were characterized by field emission scanning electron microscopy,X-ray single crystal diffraction,transmission electron microscopy and micro spectrometer.The experimental results show that Er3+is successfully and uniformly doped into ZnO nanorods,and the formation of Er_(2)O_(3) is not found.After Er^(3+) doped,the photoluminescence spectrum shows a broad band peaked at 400 nm.With the increasing of Er^(3+) concentration,the proportion of the blue part decreases,which indicates that Er3+fills part of the Zn vacancy defects and suppresses part of the O vacancy defects.At the same time,combined with the fluorescence lifetime spectrum,it can also be found that the lifetime of the radiative part is prolonged,which indicates that the fluorescence radiation efficiency is improved.Finally,ZnO nanorod contented Er3+with a mass concentration of 30%was selected to fabricate ZnO/GaN light-emitting diodes.Compared with the samples without Er^(3+),the electroluminescence intensity of ZnO/GaN light-emitting diodes increased by five times.This paper provides a simple and feasible method to improve the performance of ZnO based electroluminescent devices.

关 键 词：ZNO纳米棒阵列 Er^(3+)掺杂 缺陷调控 电致发光器件 

分 类 号：O482.31[理学—固体物理]