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作 者:翟江皞[1] 张语哲 李明[1] 任思伟[1] ZHAI Jianghao;ZHANG Yuzhe;LI Ming;REN Siwei(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)
出 处:《半导体光电》2021年第2期191-195,共5页Semiconductor Optoelectronics
摘 要:针对小卫星以至微纳卫星领域的应用需求,文章对具有抗辐照能力的CMOS图像传感器的芯片架构和关键技术进行了研究,着重对行列选电路、低噪声信号读出、可编程增益放大器和片上ADC等电路设计技术进行了分析和仿真验证。基于0.35μm CMOS抗辐照技术和工艺开展了芯片的关键电路仿真、设计和整体版图设计验证。流片后的测试结果表明,该CMOS图像传感器具有高动态、低噪声和抗辐照特点,其噪声电子为42e-,动态范围为69dB,当辐射总剂量大于100krad(Si)时,器件噪声指标符合预期。According to the application requirements of small satellite,mirco-and-nanosatellite,in this paper,the chip structure and key technologies of CMOS image sensors with radiation tolerant technology were studied.And mainly the technologies of row and column circuit,low noise readout,programmable gain amplifier and on chip ADC were analyzed and simulated.Simulations were performed on the key circuits and the whole chip layout was verified based on 0.35μm CMOS radiation tolerant technology.Test results show that this sensor presents such characteristics as high dynamic range,low noise and radiation tolerance.The noise is 42 e-and the dynamic range is 69 dB.The noise matches the requirements when the total dose irradiation is over 100 krad(Si).
关 键 词:CMOS图像传感器 低噪声信号读出 可编程增益放大器 片上ADC
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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