填孔覆盖电镀的盖帽位漏镀失效分析  被引量:2

Failure Analysis of the plate failed in caps of plating over filled via

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作  者:陈正清 丁琪 曹大福 宋祥群 Chen Zhengqing;Ding Qi;Cao Dafu;Song Xiangqun(SHENGYI Electronics CO.,LTD Guangdong Dongguan 523127)

机构地区:[1]生益电子股份有限公司,广东东莞523127

出  处:《印制电路信息》2021年第6期40-44,共5页Printed Circuit Information

摘  要:针对在使用垂直连续电镀进行填孔覆盖电镀过程中,盖帽树脂镀铜所发生的漏镀问题进行了研究。借助金相显微镜和3D显微镜对漏树脂位置及周边镀层进行了对比,同时结合POFV工艺流程对漏镀失效影响因素进行分析,可以得出,盖帽漏镀铜是由于电镀前树脂表面化学铜层被氧化破坏,在电镀过程中导通不良或者无法导通所致,而电镀前处理段药水槽的高强度喷淋是造成化学铜层被破坏的根本原因。A research was conducted to investigate the defect of plate failed in resin surface of the copper plating process of Plating over Filled Via using Vertical Continuous Plating.The position of plate failed and the surrounding plating layer were compared and analyzed with the help of metallographic microscope and 3D microscope.At the same time,the author analyzed the influencing factors of plate failed in combination with the process flow of Plating over Filled Via.It can be concluded that the plate failure of resin caps was due to the oxidation and destruction of the copper deposition layer on the resin surface before plating,which caused poor or unable to conduct during the process of plating.And the high-intensity spray of the bath of the electroplating pretreatment section was the root cause of the destruction of the copper deposition layer.

关 键 词:垂直连续电镀 填孔覆盖电镀 盖帽位漏镀 电镀前处理 强烈对喷 

分 类 号:TN41[电子电信—微电子学与固体电子学]

 

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