调Q运转外腔面发射激光器  

Q-Switched External-Cavity Surface-Emitting Laser

作　　者：张晓健 潘丽 曾颖 张洲 杨红伟[2] 王彦照[2] 王涛 朱仁江[1] 范嗣强[1] 张鹏[1] Zhang Xiaojian;Pan Li;Zeng Ying;Zhang Zhou;Yang Hongwei;Wang Yanzhao;Wang Tao;Zhu Renjiang;Fan Siqiang;Zhang Peng(College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 401331,China;The 13 th Research Institute of CETC,Shijiazhuang,Hebei 050051,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun,Jilin 130033,China)

机构地区：[1]重庆师范大学物理与电子工程学院,重庆401331 [2]中国电子科技集团公司第十三研究所,河北石家庄050051 [3]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033

出　　处：《中国激光》2021年第7期11-18,共8页Chinese Journal of Lasers

基　　金：重庆市教委科学技术研究重大项目(KJZD-M201900502);国家自然科学基金(61904024);重庆市基础研究与前沿探索项目(cstc2018jcyjAX0319);教育部“蓝火计划”(惠州)产学研联合创新资金项目(CXZJHZ201728);发光学及应用国家重点实验室开放项目(SKLA-2019-04);重庆市教委科学技术研究项目(KJQN201800528)。

摘　　要：在光泵浦外腔面发射激光器中,分别用Cr^(4+)∶YAG晶体和半导体可饱和吸收镜SESAM作为可饱和吸收介质,获得了稳定的调Q脉冲输出。使用Cr^(4+)∶YAG晶体时,调Q脉冲的宽度为10μs,脉冲重复频率为26.3 kHz。在相同的脉冲重复频率下,用半导体可饱和吸收镜所获得的调Q脉冲宽度为8μs。基于外腔面发射激光器中增益芯片的量子结构,以及Cr^(4+)∶YAG晶体和半导体可饱和吸收镜各自的时间特性,分析讨论了两种不同的可饱和吸收介质作用下,外腔面发射激光器中调Q脉冲的形成过程,初步清晰了外腔面发射激光器这一特殊种类的激光器中与调Q过程相关的物理图像。Objective Optically-pumped vertical-external-cavity surface-emitting lasers(OP-VECSELs)combine advantages of vertical-cavity surface-emitting lasers(VCSELs)and solid-state disk lasers.In addition,OP-VECSELs can produce high output power and good beam quality simultaneously.VECSELs are of interest in many fields due to the tailorability and tunability of emitting wavelengths.In addition,pulsed VECSELs with high-energy and high peak power are of considerable demand in applications such as frequency conversion,fluorescence excitation,and laser medicine.Q-switched VECSEL has been reported once,but it has not been investigated specifically and extensively,and there is no published experimental or theoretical work on a Q-switched VECSEL so far.This study introduced passively Q-switched VECSELs with a Cr^(4+)∶YAG crystal and a semiconductor saturable absorb mirror(SESAM),respectively.Based on the time characteristics of the quantum wells in the active region of the VECSELs and the time behaviors of the saturable absorbers(the Cr^(4+)∶YAG crystal and the SESAM),the experimental results were analyzed,and the formation mechanisms of the microsecond pulses were proposed.Methods The gain chip used in the VECSELs is epitaxially grown on a GaAs substrate in reverse sequences as following:an etch stop layer of AlGaAs with high Al composition,a protective layer of GaAs,an AlGaAs layer with a high barrier,an active region comprising 12 InGaAs/GaAsP quantum wells(designed to meet a target laser wavelength of 980 nm),and a distributed Bragg reflector(DBR,which is composed of 30 pairs alternate AlGaAs layers with high and low Al composition).When the grown wafer is split into small chips with 4 mm×4 mm dimension,the epitaxial end face of the chips are sequentially metalized with titanium-platinum-aurum;then,the chips are bonded to a copper heatsink,and the substrate is removed using a chemical etching.The passively Q-switched VECSEL with Cr^(4+)∶YAG crystal uses a linear cavity,and the Q-switching crystal is placed to the gai

关 键 词：激光器 调Q 外腔面发射激光器 可饱和吸收Cr^(4+)∶YAG晶体 半导体可饱和吸收镜 

分 类 号：TN245[电子电信—物理电子学]