基于飞秒激光还原氧化石墨烯的SiC纳米线接头电学增强  

Electrical Enhancement of SiC Nanowire Joints Based on Femtosecond Laser Reduction of GO

作　　者：霍金鹏 肖宇 孙天鸣[1,2] 邢松龄 沈道智 林路禅 刘磊 Huo Jinpeng;Xiao Yu;Sun Tianming;Xing Songling;Shen Daozhi;Lin Luchan;Liu Lei(State Key Laboratory of Tribology-Tsinghua University,Department of Mechanical Engineering,Tsinghua University,Beijing 100084,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan,Shanxi 030024,China;Swiss Federal Laboratories for Materials Science and Technology,Zurich,Switzerland)

机构地区：[1]清华大学机械工程系摩擦学国家重点实验室,北京100084 [2]太原理工大学材料科学与工程学院,山西太原030024 [3]瑞士联邦材料科学与技术研究所,瑞士苏黎世

出　　处：《中国激光》2021年第8期77-85,共9页Chinese Journal of Lasers

基　　金：国家重点研发计划(2017YFB1104900);国家自然科学基金(51775299,52075287,51520105007)。

摘　　要：纳米线连接为高性能微纳器件的组装和应用提供了技术手段,但现有的连接方式对于能量输入的空间精度和外部环境要求较高,其工艺窗口较窄。为改善这一问题,以氧化石墨烯(GO)作为中间连接层的纳米线连接方式,通过干法转移制备了碳化硅(SiC)纳米线-氧化石墨烯(GO)薄膜-SiC纳米线的结构,并通过飞秒激光辐照还原氧化石墨烯,降低了SiC和GO之间的势垒,通过层内导电与层间导电的方式形成了更宽的载流子通道,从而显著提升了电流水平。此外生成的还原氧化石墨烯(rGO)纳米膜对SiC纳米线的接头形成了包裹与保护作用,从而使接头部分具有更好的抗辐照和热传导性能,提升了器件的稳定性与使用寿命。最后,利用飞秒激光还原GO薄膜实现了SiC纳米线网络的电性能提升,制备了具有良好响应度和较快响应速度的紫外光传感器及透明柔性导电薄膜等器件。Objective With the rapid development of information technology,aerospace technology,biotechnology and other fields,there are more demands for the miniaturization,integration,low power consumption and application of its equipment.Due to the unique small size effect,surface effect and quantum size effect,nanomaterials have a very broad application prospect in the new generation of semiconductor devices.As a bottom-up forming method of nanomaterials,welding and joining of nanoscale materials provide a technical mean for high-performance micro/nano devices and various cross-scale applications,such as memristors,field effect transistors,sensors and so on.Although the concept of nanowire bonding has been put forward very early,the theory of nanowire bonding has not been fully established,and the existing nanojoining methods made high demands on spatial accuracy of energy input and external environment.In view of this,we considered graphene oxide(GO)as the intermediate layer to join nanowires.In this paper,we introduce graphene oxide as an auxiliary conductive path at a fixed point in space,and use the reduction effect of femtosecond laser and the characteristics of local energy input to reduce graphene oxide locally.As a way of direct energy input,ultrafast laser can quickly adjust the energy input in space domain and time domain through optical lens and photoelectric shutter.The theoretical point contact joint was optimized as line contact and area contact,so as to improve the current level and performance.In addition,the protective effect of reduced graphene oxide(rGO)nanofilms on the structure was further studied,and a series of nanowire network device such as ultraviolet(UV)detectors and flexible transparent conductive films were prepared.Methods SiC nanowire-GO film-SiC nanowire structure was prepared by dry transfer method(Fig.1).The transfer process of a single nanomaterial is as follows:10μL of SiC nanowires suspension was placed on polydimethylsiloxane(PDMS)with a pipette gun.After evaporation of alcohol,SiC

关 键 词：激光制造 飞秒激光 碳化硅纳米线 氧化石墨烯 微纳器件 

分 类 号：TB383[一般工业技术—材料科学与工程]