80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering  

作　　者：Yang Shi De Zhou Yu Yu Xinliang Zhang 

机构地区：[1]Wuhan National Laboratory for Optoelectronics&School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Photonics Research》2021年第4期605-609,共5页光子学研究（英文版）

基　　金：National Key Research and Development Program of China(2019YFB2203502);National Natural Science Foundation of China(61775073,61922034);Key Research and Development Program of Hubei Province(2020BAA011);Program for HUST Academic Frontier Youth Team(2018QYTD08).

摘　　要：A high-speed germanium(Ge)waveguide photodiode(PD)is one of the key components of an integrated silicon photonics platform for large-capacity data communication applications,but the parasitic parameters limit the increase of its bandwidth.Several studies have been reported to reduce parasitic parameters,at the cost of compromising other performances.Here,we propose and investigate a bandwidth-boosting technique by comprehensively engineering the parasitic parameters.Experimentally,a bandwidth up to 80 GHz is realized for vertical positive-intrinsic-negative(PIN)Ge PDs without decreasing the responsivity and dark current,indicating that parasitic parameter engineering is a promising method to promote high-speed performance of Ge PDs.

关 键 词：WAVEGUIDE PARAMETER BOOSTING 

分 类 号：TN364.2[电子电信—物理电子学]