一种应用于GaN功放的高压电源调制器设计  

A Design of High-Voltage Power Modulator for GaN Power Amplifier

作　　者：王其超[1] 季睿 姚佳 Wang Qichao

机构地区：[1]中国电子科技集团公司第24研究所,重庆400060

出　　处：《工业控制计算机》2021年第6期134-135,共2页Industrial Control Computer

摘　　要：电源调制器是雷达发射机系统中脉冲功率放大器的重要组成部分,用于实现脉冲调制功能。对GaN功率放大器的脉冲调制工作原理进行了介绍,并根据设计指标要求提出了一种应用于GaN功放的电源调制器设计。该设计线路上采用高速MOSFET驱动器后接P沟道MOSFET的线路结构,同时具有负压掉电保护功能和电流泄放功能,有效解决了电流拖尾现象。工艺封装上采用混合电路封装,并基于HTCC材料设计了一款一体化陶瓷外壳,大大缩小了器件尺寸。最后样品的上升时间测试为16.0ns,下降时间为84.0ns,导通延迟时间为80.8ns,关断延迟时间479.2ns,导通电阻27.5mΩ。Power modulator is an important part of pulse power amplifier in radar transmitter system,which is used to realize pulse modulation function.This paper introduces the principle of pulse modulation of GaN power amplifier,and proposes a power modulator design which is applied to GaN amplifier according to the design index.The design circuit adopts the high-speed MOSFET driver connected with P-channel MOSFET,and has the function of negative-voltage power off protection and current discharge,which effectively solves the current trail when the P-channel power MOSFET turned off.The process package adopts hybrid circuit package,and designs an integrated ceramic shell based on HTCC material,which greatly reduces the size of the device.Finally,give the test result,the rising time of the sample is 16.0ns,the falling time is 84.0ns,the on delay time is 80.8ns,the closing delay time is 479.2ns,and the conduction resistance is 27.5mΩ.

关 键 词：电源调制器 脉冲调制 GaN功放 一体化陶瓷外壳 

分 类 号：TN957.3[电子电信—信号与信息处理] TN722.75[电子电信—信息与通信工程]