离子径迹特征与纳米反相器链单粒子瞬态的关联性研究  

Relationship between ion track characteristics and single event transients in nanometer inverter chain

作　　者：赵雯 陈伟[2] 罗尹虹[2] 贺朝会[1] 沈忱[3] Zhao Wen;Chen Wei;Luo Yin-Hong;He Chao-Hui;Shen Chen(School of Nuclear Science and Technology,Xi’an Jiaotong University,Xi’an 710049,China;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,NorthwestInstitute of Nuclear Technology,Xi’an 710024,China;Cogenda Co Ltd.,Suzhou 215000,China)

机构地区：[1]西安交通大学核科学与技术学院,西安710049 [2]西北核技术研究所,强脉冲辐射环境模拟与效应国家重点实验室,西安710024 [3]苏州珂晶达电子有限公司,苏州215000

出　　处：《物理学报》2021年第12期162-172,共11页Acta Physica Sinica

基　　金：国家自然科学基金重大项目(批准号:11690043,11690040)资助的课题。

摘　　要：相同线性能量传输值(linear energy transfer,LET)、不同能量和种类的离子在径迹特征方面存在差异,导致这些离子在组合逻辑电路中产生的单粒子瞬态(single event transients,SET)有所不同,这种现象随着电路特征工艺尺寸的缩减逐渐凸显.开展离子径迹特征与纳米组合逻辑电路SET的关联性研究对准确预估纳米器件在轨单粒子效应软错误率具有重要意义.本文以65 nm互补金属氧化物半导体工艺的体硅反相器链为研究载体,建立了反相器链的三维器件物理模型,开发了体硅中离子径迹的粒子输运计算程序,基于器件物理和粒子输运的耦合仿真,研究了相同LET值的高低能离子(低能离子能量小于10 MeV·n^(–1),高能离子能量介于几十MeV·n^(–1)和几百MeV·n^(–1)之间)在反相器链中所产生的SET脉宽差异.研究结果表明:增加高低能离子每核子能量比率,或者在该比率相近时提高LET值,会使得具有相同LET值的高低能离子的径迹差异变大,进而导致两者产生的SET脉宽差异更明显;离子径迹特征对SET的影响与离子入射角度存在一定的依赖关系,但与反相器链偏置电压的关联性不强.Ions with the same linear energy transfer(LET)value,but different energies and species have various ion track characteristics,and thus induce different single event transient(SET)responses in combinational logics.As the technology feature size shrinks,this issue continues to be serious.The research of the relationship between ion track characteristics and SETs in the nanometer combinational logic circuits is of great significance for accurately predicting the soft error rates of nanometer devices used in spacecraft.The combinational logic circuit investigated in this paper is a 65 nm bulk silicon complementary metal oxide semiconductor(CMOS)technology inverter chain.The three-dimensional TCAD model of the inverter chain is established,and the particle transport program for the ion track in bulk silicon is developed by Geant4.The track characteristics of high-and low-energy ions(the energy of low-energy ions is less than 10 MeV·n^(–1),the energy of high-energy ions ranges from tens of MeV·n^(–1) to hundreds of MeV·n^(–1))which have the same LET value are compared with each other.Based on the coupled simulation of TCAD and Geant4,the difference in SET pulse widths,induced by ions with the same LET value but different energies,are investigated.It is found that when the energy per nucleon ratio of high-energy ion to low-energy ion increases,the difference in electron-hole pair densities near the center axis of the ion track is more significant,and thus the difference in SET pulse widths is larger.If the energy per nucleon ratio is similar,raising the LET value of ions can increase the difference in electron-hole pair densities on the same radial scale of the ion tracks,and make the SET pulse width difference more obvious.For the high-and low-energy ions with the same LET value,the single event charge generations are different.On the other hand,the change of the ion incident angle results in different charge collections.The coupling of these two factors makes the difference in SET pulse widths dependent on th

关 键 词：单粒子瞬态 离子径迹 组合逻辑电路 线性能量传输值 

分 类 号：TN791[电子电信—电路与系统]