基于温敏电参数的碳化硅MOSFET结温测量方法综述  

A Review of Junction Temperature Measurement Methods of SiC MOSFET by Temperature-sensitive Electrical Parameters

作　　者：吴涛 孙鹏 赵志斌 崔翔 吴军民 WU Tao;SUN Peng;ZHAO Zhibin;CUI Xiang;WU Junmin(State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;Global Energy Interconnection Research Institute Limited Company,Changping District,Beijing 102211,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]全球能源互联网研究院有限公司,北京市昌平区102211

出　　处：《中国电机工程学报》2021年第11期3904-3914,共11页Proceedings of the CSEE

基　　金：国家重点研发计划项目(2018YFB0905703)。

摘　　要：结温测量是功率半导体器件热表征、可靠性研究、状态监测以及健康管理的重要基础,其中基于温敏电参数的方法被寄予厚望。而碳化硅MOSFET作为新一代宽禁带半导体器件,温敏电参数法在其结温测量中的应用也面临着新的挑战。该文简述温敏电参数法的发展,梳理碳化硅MOSFET温敏电参数法的研究现状,重点关注温度特性及具体实现方法,从线性度、灵敏度、耦合量、分散性、稳健性、自热程度和在线测量难度7个维度进行对比。对于目前存在的研究难点,从碳化硅材料特性和碳化硅MOSFET可靠性两方面进行讨论解释。长远来看,灵敏度低及封装老化可能是未来主要的难点所在。Junction temperature measurement is an important basis for thermal characterization, reliability research,condition monitoring, and health management of power semiconductor devices, and the methods based on temperaturesensitive electrical parameters are seen to be a feasible way. As a new generation of wide band gap semiconductor devices, SiC MOSFET also faces new challenges in junction temperature measurement by temperature-sensitive electrical parameters.This paper briefly described the development of temperature-sensitive electrical parameter methods. And the research status of these measurement methods in SiC MOSFET were reviewed, which focused on the temperature characteristics and specific implementation. All these methods were then compared in terms of linearity, sensitivity, coupling parameters, dispersion, robustness, self-heating and online difficulty. The current problems were discussed and explained from the aspects of material characteristics and reliability in SiC MOSFET. In the long run, low sensitivity and package aging may be the main problems in the future.

关 键 词：温敏电参数 碳化硅MOSFET 结温测量 

分 类 号：TN303[电子电信—物理电子学]