电纺掩模制备铜纳米线网络透明电极  

Preparation of Copper Nanowire Network Transparent Electrodes by Electrospinning Mask

作　　者：翟艳玉 孙钦军 李丽娟[1,2] 郝玉英 Zhai Yanyu;Sun Qinjun;Li Lijuan;Hao Yuying(College of Physics and Optoelectronic Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学物理与光电工程学院,太原030024 [2]太原理工大学新型传感与智能控制教育部重点实验室,太原030024

出　　处：《微纳电子技术》2021年第6期531-538,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(62074108,61805172);山西省自然科学基金资助项目(201801D121097);山西省科学技术重大专项(20201101012);山西省科技创新培育团队建设项目(201805D131012-3);NSFC-山西省煤基低炭联合基金(U1710115)。

摘　　要：通过真空蒸镀技术、静电纺丝技术和湿法腐蚀法成功制备出铜纳米线网络透明电极。首先优化纺丝条件,制备出均匀的聚丙烯腈(PAN)纳米纤维,然后将PAN纳米纤维作为掩模腐蚀铜膜得到铜纳米线网络透明电极。通过对纺丝时间、纺丝接收取向、蒸气处理时间和湿法腐蚀时间等制备条件进行优化,得到表面光滑连续、形貌良好的铜纳米线网络透明电极。利用紫外-可见分光光度计、光学显微镜、表面低电阻测试仪和扫描电子显微镜(SEM)等测试仪器对透明电极的性能进行了分析和讨论。研究发现:纺丝1 min、交叉接收PAN纳米纤维、蒸气处理30 s和湿法腐蚀6 min时得到的铜纳米线网络透明电极表面光滑、连续均匀,长径比高于2.25×10^(4),铜纳米线网络透明电极透射率约为80%,平均方块电阻为21.72Ω/。结果表明:电纺掩模制备的铜纳米线网络透明电极的光电性能已接近铟锡氧化物(ITO)透明电极,推动了金属纳米线透明电极在未来光电子器件中的广泛应用。The copper nanowire network transparent electrodes were successfully prepared by vacuum evaporation technology,electrospinning technology and wet etching method.Firstly,the spinning conditions were optimized to prepare uniform polyacrylonitrile(PAN)nanofibers,and then the copper nanowire network transparent electrode was obtained by etching the copper film with PAN nanofibers as a mask.By optimizing preparation conditions such as spinning time,spinning receiving orientation,steam treatment time,wet etching time and so on,the copper nano-wire network transparent electrode with smooth and continuous surface and good morphology was obtained.The performances of the transparent electrode were analyzed and discussed using the UV-vis spectrophotometer,optical microscope,surface low resistance tester,scanning electron microscope(SEM)and other test instruments.It is found that after spinning for 1 min,cross receiving PAN nanofibers,steaming treatment for 30 s and wet etching for 6 min,the surface of the obtained copper nanowire network transparent electrode is smooth,continuous and uniform,the aspect ratio is greater than 2.25×10^(4).The transmittance of the copper nanowire network transparent electrode is about 80%,and the average sheet resistance is 21.72Ω/□.The results show that the photoelectric performances of the copper nanowire network transparent electrode prepared by electrospinning mask are close to those of the indium tin oxide(ITO)transparent electrode,promoting the wide application of metal nanowire transparent electrodes in the future optoelectronic devices.

关 键 词：静电纺丝 铜纳米线 纳米纤维 透明电极 铟锡氧化物(ITO) 

分 类 号：TB383[一般工业技术—材料科学与工程]