MACE法制备多孔硅的形貌及光致发光性能  

Morphology and Photoluminescence Properties of Porous Silicon Prepared by MACE Method

作　　者：张艺 端木庆铎[1] Zhang Yi;Duanmu Qingduo(School of Science,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《微纳电子技术》2021年第5期392-396,共5页Micronanoelectronic Technology

摘　　要：采用金属辅助化学腐蚀(MACE)法,通过控制不同的腐蚀时间制备出多孔硅。利用扫描电子显微镜(SEM)观察多孔硅形貌,分析结果表明,随着腐蚀时间的增加,硅表面腐蚀孔洞变大,孔洞深度增加,同时孔洞深度的增加速率随之变缓。采用325 nm He-Cd激光光源的荧光光谱仪进行光致发光测试,研究在325 nm的激发光下不同腐蚀时间多孔硅的发光性能。发光强度与多孔硅的腐蚀时间及形貌有关,腐蚀时间延长,多孔硅形貌改变,多孔硅的发光强度先增加后减少。腐蚀20 min时多孔硅的发光强度最大,比腐蚀5 min时增加了74%,发光峰位基本不发生变化。多孔硅光致发光性能的研究可为各种基于多孔硅光电器件的研究提供一定的参考。With the metal-assisted chemical etching(MACE) method, porous silicon was prepared by controlling different etching time. The scanning electron microscope(SEM) was used to observe the morphology of porous silicon. The analysis result shows that with the increase of the etching time, the etching hole on silicon surface becomes larger, the hole depth increases, and meanwhile the growth rate of the hole depth slows down. The photoluminescence test was performed by the fluorescence spectrometer of 325 nm He-Cd laser source, and the photoluminescence performances of porous silicon for different etching time were studied under the excitation light of 325 nm. The luminescence intensity is related to the etching time and morphology of porous silicon. With the increase of the etching time, the morphology of porous silicon changes, and the luminescence intensity of porous silicon increases first and then decreases. The luminescence intensity of porous silicon is the highest after etching for 20 min, which is 74% higher than that for 5 min, and the luminescence peak basically does not change. The study of the photoluminescence performances of porous silicon provides a reference for the research of various kinds of porous silicon based photoelectric devices.

关 键 词：金属辅助化学腐蚀(MACE) 多孔硅 形貌 光致发光 发光强度 

分 类 号：TN304.12[电子电信—物理电子学] TN305.2