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作 者:化称意 王松冕 李莉莉[1] 潘攀[1] 蔡军[1] 冯进军[1] HUA Chen-yi;WANG Song-mian;LI Li-li;PAN Pan;CAI Jun;FENG Jin-jun(National Key Laboratory of Science and Technology on Vacuum Electronics,Beijing Vacuum Electronics Research Institute,Beijing 100015,China)
机构地区:[1]中国电子科技集团公司第十二研究所微波电真空器件国家级重点实验室,北京100015
出 处:《真空电子技术》2021年第3期32-35,53,共5页Vacuum Electronics
摘 要:利用微波等离子体化学气相沉积(MPCVD)设备制备了硼掺杂CVD金刚石,采用三维电磁仿真软件和飞秒激光加工系统优化设计并研制出用于W波段折叠波导行波管的硼掺杂CVD金刚石衰减器,采用矢量网络分析仪分别测试了硼掺杂CVD金刚石的介电性能和衰减器的驻波系数和传输系数。结果表明硼掺杂CVD金刚石在W波段介电常数在7.49~8.43之间,损耗角正切≥0.26;硼掺杂CVD金刚石衰减器在85~110 GHz范围内驻波比小于1.10,S 21<-50 dB。Boron-doped diamond film was prepared by microwave plasma chemical vapor deposition(MPCVD).The Boron-doped CVD diamond attenuator which was used in W band folded waveguide traveling wave tube was designed and prepared by the 3D simulation software and the femtosecond laser.The dielectric property of the boron-doped diamond film and the match characteristic and the absorbability of the boron-doped diamond attenuator were investigated by vector network analyzer.The result show that the dielectric constant was between 7.49 and 8.43,and the loss tangent was more than 0.26 in W band;The voltage standing wave ration(VSWR)and S 21 of boron doped CVD diamond attenuator were less than 1.10 and below-50 dB in the range of 85-110 GHz.
关 键 词:硼掺杂CVD金刚石 衰减器 W波段折叠波导行波管 电压驻波比
分 类 号:TN124[电子电信—物理电子学]
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