G波段倍频扩展互作用速调管的研究  

Research on G-Band Frequency Multiplier Extended Interaction Klystrons

作　　者：钟勇 李冬凤[1] 王加松[1] 韦莹[1] ZHONG Yong;LI Dong-feng;WANG Jia-song;WEI Ying(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2021年第3期50-53,共4页Vacuum Electronics

摘　　要：扩展互作用器件是一种能够在毫米波亚毫米波段提供大功率输出的紧凑型真空电子器件。本文提出了一种新型的宽带G波段倍频扩展互作用速调管,在W波段扩展互作用速调管的群聚段产生的二次谐波能够在G波段输出腔产生大功率的电磁波。利用三维粒子模拟软件PIC对该倍频扩展互作用速调管进行了优化设计,粒子模拟结果表明,在束流电压15 kV,束流电流0.7 A的情况下,当W波段输入激励信号的带宽大于1 GHz时,在G波段脉冲输出功率达到190 W以上,带宽大于2 GHz,效率为1.8%。Extended interaction device is a compact vacuum electronic device which can provide high power output in millimeter wave and submillimeter wave band.A new type of broadband G-band frequency multiplier extended interaction klystron is proposed.The second harmonic generated in the cluster section of W-band extended interaction klystron can generate high power electromagnetic wave in G-band output cavity.Three-dimensional particle simulation software(PIC)is used to optimize the design of the frequency multiplier extended interaction klystron.The simulation results show that with the beam voltage of 15 kV and beam current of 0.7 A,when the bandwidth of W-band input excitation signal is greater than 1 GHz,the PW power of G-band is more than 190 W,the bandwidth is greater than 2 GHz,and the efficiency is 1.8%.

关 键 词：倍频 速调管 群聚 输出腔 

分 类 号：TN122[电子电信—物理电子学]