计及芯片导通压降温变效应的功率模块三维温度场解析建模方法  

Analytical 3D Temperature Field Model for Power Module Considering Temperature Effect of Semiconductor Voltage Drop

作　　者：陈宇[1] 周宇[1] 罗皓泽[1] 李武华[1] 何湘宁[1] Chen Yu;Zhou Yu;Luo Haoze;Li Wuhua;He Xiangning(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学电气工程学院,杭州310027

出　　处：《电工技术学报》2021年第12期2459-2470,共12页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金杰出青年科学基金项目(51925702);国家自然科学基金面上项目(51677166);上汽基金会项目“电机控制器IGBT寿命模型研究”(1924);中央高校基本科研业务费专项资金项目(K20200097)资助。

摘　　要：绝缘栅双极型晶体管(IGBT)功率模块在新能源汽车动力总成系统中应用广泛。高功率密度和极限工况运行的应用需求对IGBT模块的热可靠性设计提出严峻挑战。受芯片导通压降温变效应的影响,芯片表面电流密度呈现不均匀分布,导致传统的热建模方法无法准确地描述功率模块温度场分布,这给芯片过电流工况下的强健性评估带来困难。该文将功率模块连续域三维温度场模型与芯片有源区离散化一维电学模型进行联合,提出一种热-电场路耦合的功率模块三维温度场解析建模方法,实现片上温度场的准确描述,误差小于4.0%。进一步地,研究芯片的电流分布规律,发现正温度特性下电流集中在IGBT有源区边缘,这种非均匀分布特征对片上温度峰值有抑制作用,能有效提升功率模块的过电流能力。最后以型号SEMiX603GB12E4p模块为例,针对提出的解析建模方法进行了验证,仿真与实验结果均表明,该模型能够准确表征不同电流水平下IGBT模块的热特性,验证了该模型算法的准确性和有效性。Insulated gate bipolar transistor power modules are widely used in EV powertrain systems.The thermal design is challenged by the demands of high power density and extreme operating conditions.Due to the temperature effect of semiconductor voltage drop,the chip current presents a non-uniform distribution.Therefore,the traditional thermal model cannot accurately describe the temperature field,which brings difficulties to the robustness design under overcurrent conditions.In this paper,combined with a continuous 3-D temperature field model and a multicellular 1-D electrical model,a field-circuit coupling based 3-D temperature field is proposed to achieve accurate description of the semiconductor temperature.The error is less than 4.0%.Furthermore,it is found that the multicellular current is concentrated on the edge of the IGBT active region.The non-uniform effect can suppress the peak temperature and can effectively improve the overcurrent capability.Finally,the proposed analytical model is verified by the SEMiX603 GB12 E4 p module.The FEM and experimental results show that the model can describe the temperature effect at different current levels,and its accuracy and effectiveness are verified.

关 键 词：功率模块 温变效应 场路耦合 三维温度场 过电流能力 

分 类 号：TN46[电子电信—微电子学与固体电子学]