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作 者:李志刚 韦应靖[1] 张庆利[1] 唐智辉 方登富[1] 冯梅[1] 以恒冠 Li Zhigang;Wei Yingjing;Zhang Qingli;Tang Zhihui;Fang Dengfu;Feng Mei;Yi Hengguan(China Institute for Radiation Protection,Taiyuan 030006,China)
出 处:《核安全》2021年第3期78-85,共8页Nuclear Safety
基 金:国家自然科学基金资助项目,项目编号:11605161;国家重点研发计划课题,项目编号:2016YFC1402500。
摘 要:本文提供了一种用于HPGe探测器蒙卡模型优化的方法和操作流程,目的在于使探测器蒙卡模型优化工作有序化和简易化,避免重复和无用的模拟计算工作量。本文利用MCNP模拟和实验相结合的方式对HPGe探测器晶体顶端和侧面死层厚度进行了修正,利用锗晶体顶端和侧面死层对不同能量段射线影响程度的差异,初步计算了两处死层厚度,然后通过枚举法进一步确定符合预设要求的最优解,结果10个不同测量位点处效率模拟计算结果和实验测量结果的相对偏差均方根均小于5%,此结果表明该方法对HPGe探测器蒙卡模型优化工作有效且可行。It was found that the simulative efficiency calculated by the manufacturer's HPGe detector model disagreed with the experimental efficiency.In this work we provide a method and operating procedure for dead layer thickness optimization of the HPGe detector model.The purpose is to make the optimization of the HPGe detector model more ordered and simplified,and avoid repetitive and useless simulation calculations.In this paper,the top dead layer and side dead layer of Ge crystal were corrected by Monte Carlo simulation along with experiment.The germanium crystal's top and side dead layer thickness were preliminarily calculated based on the difference in their effect on different energy range rays.Then,the enumeration method is used to further determine the optimal solution that meets the preset requirements.The result indicate that the average relative deviation at 10 different measurement positions are less than 5%.
关 键 词:探测器模型优化 晶体死层 HPGE探测器 蒙特卡罗
分 类 号:TL817.2[核科学技术—核技术及应用]
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