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作 者:董康佳 姜晨[1] 任绍彬 郎小虎 高睿 叶卉[1] DONG Kangjia;JIANG Chen;REN Shaobin;LANG Xiaohu;GAO Rui;YE Hui(College of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Nanpre Mechanics Co.Ltd.,Shanghai 201203,China)
机构地区:[1]上海理工大学机械工程学院,上海200093 [2]上海微高精密机械工程有限公司,上海201203
出 处:《无机材料学报》2021年第6期645-651,共7页Journal of Inorganic Materials
基 金:国家自然科学基金(51475310);上海市青年科技英才扬帆计划项目(18YF1417700)。
摘 要:砷化镓因其良好的光电特性被广泛应用于电子与半导体领域,为推动砷化镓解理加工技术,对砷化镓材料力学特性的各向异性进行计算并分析。本研究对砷化镓各个晶面之间的夹角、面间距、原子的密度等结构参数进行计算,基于广义胡克定律结合压痕实验,分析砷化镓材料表层弹性模量、泊松比、剪切模量、硬度、断裂韧性等力学特性在{100}晶面沿不同晶向力学性能的变化规律。结果表明:砷化镓不同晶面间结构参数的不同是导致砷化镓力学特性呈现各向异性的主要原因;砷化镓在{100}晶面上弹性模量、泊松比、剪切模量的各向异性均呈现出周期性变化,且{100}晶面的剪切模量为恒值59.4 GPa;砷化镓{100}晶面硬度的各向异性变化幅度较小,断裂韧性变化幅度较大,最小值为0.304 MPa·m^(1/2),位于<110>晶向,确定<110>晶向是裂纹最容易扩展的晶向。Gallium arsenide possesses excellent photoelectric property which have been widely used in electron and semiconductor industries.To promote the cleavage manufacturing technology of gallium arsenide,the anisotropy of mechanical property of gallium arsenide is calculated in this work.The structural parameters,such as angle between the crystal planes,the spacing between planes and density of atoms,were calculated.The change rule of elastic modulus,Poisson’s ratio,shear modulus,hardness and fracture toughness of monocrystalline gallium arsenide on crystal{100}plane with crystal orientation was analyzed by generalized Hooke’s law and indentation tests.The results show that difference of structural parameters between planes is the main reason for the anisotropy of mechanical properties of GaAs.With variation of crystal orientation,the elastic modulus and Poisson’s ratio on the{100}crystal plane appear periodic changes,while shear modulus is identically equal to 59.4 GPa.Anisotropy of GaAs{100}crystal plane hardness changes slightly while fracture toughness changes greatly with a minimum value of 0.304 MPa·m^(1/2) in<110>crystal direction which is sensitive to the crack propagation.
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