一款GaAs PHEMT超宽带无源双平衡混频器MMIC  

A GaAs PHEMT Ultra Wideband Passive Double Balanced Mixer MMIC

作　　者：王贵德[1] 范举胜 Wang Guide;Fan Jusheng(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第6期451-455,共5页Semiconductor Technology

摘　　要：混频器是微波系统关键部件之一。微波通信系统的宽带化和小型化发展趋势对混频器性能提出更高要求。基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款超宽带无源双平衡混频器单片微波集成电路(MMIC)。该混频器采用环形肖特基二极管结构和两个新颖的螺旋式平行耦合微带线巴伦结构,大大提高了混频器工作带宽,减小了芯片尺寸,提高了本振(LO)到射频(RF)端口的隔离度。在片探针测试结果显示该芯片在上、下变频模式下RF和LO工作频率均为2~22 GHz,中频工作频率为0~4 GHz,变频损耗≤11.5 dB,LO到RF端口隔离度≥37 dB,LO输入功率为15 dBm。芯片尺寸为1.7 mm×1.0 mm。Mixer is one of the key components of microwave systems.The wideband and miniaturization development tendency of microwave communication systems puts forward higher requirements on the performance of mixers.An ultra wideband passive double balanced mixer monolithic microwave integrated circuit(MMIC)was designed based on the GaAs pseudomorphic high electron mobility transistor(PHEMT)process.The mixer adopted a ring Schottky diode structure and two novel spiral parallel coupled microstrip lines baluns,which greatly improved the working bandwidth of the mixer,reduced the chip size,and improved the isolation between the local oscillator(LO)and radio frequency(RF)ports.On-wafer probe measurement results show that in the up and down frequency conversion modes the RF and LO working frequencies of the chip are both 2-22 GHz,the intermediate frequency working frequency is 0-4 GHz,the conversion loss is not more than 11.5 dB,the isolation between the LO and RF ports is not less than 37 dB,and the LO input power is 15 dBm.The chip area is 1.7 mm×1.0 mm.

关 键 词：GaAs赝配高电子迁移率晶体管(PHEMT) 单片微波集成电路(MMIC) 无源双平衡混频器 超宽带 高隔离度 

分 类 号：TN43[电子电信—微电子学与固体电子学]