高可靠性大功率808nm半导体激光器  

High Reliability High Power 808nm Semiconductor Laser

作　　者：张发智 张岩[1] 彭海涛[1] 宁吉丰[1] 王彦照[1] 王英顺[1] 陈宏泰[1] Zhang Fazhi;Zhang Yan;Peng Haitao;Ning Jifeng;Wang Yanzhao;Wang Yingshun;Chen Hongtai(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第6期461-465,共5页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2018YFB1107300)。

摘　　要：研制了一款基于AlGaInAs/AlGaAs应变补偿量子阱大光腔结构的808 nm半导体激光器。采用金属有机物化学气相沉积方法外延生长,在超高真空环境下进行圆片解理,然后原位沉积钝化膜,最后在镀膜机内沉积增透膜和高反膜,避免了激光器腔面在空气中解理容易使其被空气中的氧和碳等杂质污染。对封装好的半导体激光器进行了电光特性测试。测试结果表明,器件的波导宽190μm、腔长4 mm,25℃时的阈值电流为1.5 A,12 A直流驱动下的输出功率达到12.47 W,最高电光转换效率为61.3%,腔面没有出现灾变性光学烧毁。器件的快轴发散角为28°,慢轴发散角为8°。器件在45℃、14 A的驱动电流下工作8000 h没有失效,并由此推算器件在25℃、12 A的恒流驱动下,寿命大于100000 h。An 808 nm semiconductor laser based on large cavity structure of AlGaInAs/AlGaAs strain compensated quantum well was developed.Metal organic chemical vapor deposition method was used for epitaxial growth.Wafer cleavage was carried out in an ultra-high vacuum environment,then the passivation film was deposited in situ,and finally the anti-reflection film and high-reflection film were deposited in the coating machine,which avoided the cleavage of the laser cavity surface in the air that might cause it to be polluted by impurities such as oxygen and carbon in the air.The electro-optical characteristics of the packaged semiconductor laser were tested.The results show that the device with a waveguide width of 190μm and a cavity length of 4 mm has a threshold current of 1.5 A at 25℃,an output power of 12.47 W under 12 A DC drive,and a maximum electro-optical conversion efficiency of 61.3%without catastrophic optical damages on the cavity surface.The fast-axis and slow-axis divergence angles of the device are 28°and 8°,respectively.The device has operated for 8000 h under 14 A drive current at 45℃without failure.And it can be inferred that the device has a lifetime of more than 100000 h under a constant drive current of 12 A at 25℃.

关 键 词：半导体激光器 可靠性 高功率 离子铣 灾变性光学烧毁 

分 类 号：TN248.4[电子电信—物理电子学]