考虑温度影响的SiC MOSFET动态性能分析与优化  

Dynamic Performance Analysis and Optimization of SiC MOSFETs Considering Temperature Effect

作　　者：王彦楠 李铮 杨鹏飞 刘伟 Wang Yannan;Li Zheng;Yang Pengfei;Liu Wei(Beijing Smartchip Microelectronics Technology Company Limited,Beijing 102200,China)

机构地区：[1]北京智芯微电子科技有限公司,北京102200

出　　处：《半导体技术》2021年第6期466-473,共8页Semiconductor Technology

摘　　要：SiC器件的高开关速度使其瞬态过程的非理想特性大为增加,对杂散参数也更为敏感,容易激发高频振荡和过冲。为充分发挥其高开关速度优势,提升系统控制性能,首先,建立SiC MOSFET开关瞬态解析模型,提取了开关过程的关键动态性能参数电流变化率(di/dt)和电压变化率(dv/dt);其次,通过理论分析,明确了di/dt和dv/dt的关键影响因子为驱动电阻、栅源电容、栅漏电容和温度。然后,在Simplorer软件中搭建双脉冲测试电路,定量分析了不同驱动参数和温度对di/dt和dv/dt的影响规律。结果表明:驱动参数对di/dt和dv/dt具有不同的控制效果,并且di/dt和dv/dt在开通、关断过程分别体现正温度特性和负温度特性。最后,以150℃环境为例,通过减小关断电阻补偿温度影响,实现了在不增大电应力的前提下,关断损耗降低了8.37%。The high switching speed of SiC devices greatly increases their non-ideal characteristics in the transient process and is more sensitive to stray parameters,which is easy to excite high frequency oscillation and overshoot.To give full play to the advantage of high switching speed and improve the control performance of the system,firstly,the transient analytical model of the SiC MOSFET switch was established to extract the key dynamic performance parameters,i.e.rate of current change(di/dt)and rate of voltage change(dv/dt)during the switching process.Secondly,through theoretical analysis,the key influencing factors of di/dt and dv/dt are determined as driving resistance,gate-source capacitance,gate-drain capacitance and temperature.Then,a double-pulse test circuit was built using the Simplorer software,and the influence law of different driving parameters and temperatures on di/dt and dv/dt was analyzed quantitatively.The results show that the driving parameters have different control effects on di/dt and dv/dt,and di/dt and dv/dt reflect positive and negative temperature characteristics respectively in the turn-on and turn-off processes.Finally,taking the environment of 150℃as an example,by reducing the effect of the turn-off resistance compensation temperature,the turn-off loss is reduced by 8.37%without increasing the electrical stress.

关 键 词：SiC MOSFET 温度 动态性能 电流变化率 电压变化率 驱动参数 控制效果 

分 类 号：TN386[电子电信—物理电子学]