Cd饱和气氛退火对碲锌镉晶体导电类型转变界面的影响  

Influence of Cd-rich Annealing on Position-dependent Conductivity Transition in Cd_(1-x)Zn_(x)Te Crystal

作　　者：袁绶章[1] 赵文 孔金丞[1] 姜军[1] 赵增林[1] 姬荣斌[1] YUAN Shouzhang;ZHAO Wen;KONG Jincheng;JIANG Jun;ZHAO Zenglin;JI Rongbin(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2021年第6期517-522,共6页Infrared Technology

摘　　要：在富Te生长条件下,通过垂直布里奇曼法制备的部分碲锌镉晶体内存在导电类型转变界面。采用富Te液相外延技术在含有导电类型转变界面的碲锌镉衬底上生长碲镉汞薄膜,制成的红外焦平面探测器响应图上存在明显的响应不均匀分界面。碲锌镉晶体的导电类型转变由缺陷类型的不同引起,为消除碲锌镉衬底的导电类型转变界面,提升碲镉汞红外焦平面的成像质量,对含有导电类型转变界面的碲锌镉晶体进行了Cd饱和气氛退火实验,研究了时间和温度等退火条件对晶体导电类型转变界面的影响,探讨了Cd间隙和Cd空位缺陷的形成机制,为晶体生长过程中的Cd空位缺陷抑制提出了解决思路。In this study,Cd1-xZnxTe(x=0.04)crystals were grown using the Te-rich Vertical Bridgman(VB)method.A position-dependent conductivity transition was found in some of the as-grown Cd1-xZnxTe ingots,which caused significant nonuniformity in the Hg1-yCdyTe(MCT)focal plane array(FPA)response map.Cd-rich annealing experiments were performed on Cd1-xZnxTe ingots with position-dependent conductivity transition,and the relationships between the position-dependent conductivity transition and annealing conditions,including annealing time,temperature,and Cd partial pressure,were studied.Furthermore,by understanding the formation mechanism of Cd vacancies and Cd interstitials,we found that Cd vacancies can be reduced during Cd1-xZnxTe ingot growth.

关 键 词：碲锌镉 导电类型转变界面 退火 Cd源 

分 类 号：TB34[一般工业技术—材料科学与工程]