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作 者:高天阳 曹峰梅[1] 王霞[1] 崔志刚 GAO Tianyang;CAO Fengmei;WANG Xia;CUI Zhigang(Key Laboratory of Photoelectronic Imaging Technology and System,Ministry of Education of China,Beijing Institute of Technology,Beijing 100081,China;China General Technology Research Institute,Beijing 100091,China)
机构地区:[1]北京理工大学光电成像技术与系统教育部重点实验室,北京100081 [2]中国通用技术研究院,北京100091
出 处:《红外技术》2021年第6期537-542,共6页Infrared Technology
基 金:国家重点研发计划项目(2019QY0902)。
摘 要:通过将直径为40 mm的像增强器与全画幅尺寸CMOS直接耦合,对大尺寸直耦工艺进行了研究。针对使用透镜耦合制成的大尺寸ICCD/ICMOS体积大、光能损失大以及光锥耦合的器件莫尔条纹较多等问题提出采用直接耦合的工艺制作ICCD/ICMOS。文中研制的大尺寸ICMOS可获取更大视场内的信息,整机分辨率可达3800×1900 LW/PH,画面清晰,无明显莫尔条纹,结构紧凑,整机仅为手持数码相机大小,隐蔽性强,有利于在复杂环境中更准确、快速地获取目标信息。The large size direct coupling technology was studied by coupling a 40 mm diameter image intensifier with a full-frame CMOS. To solve the problems of large-size ICCD/ICMOS made by lens coupling, such as large volume, large light energy loss, and large number of moiré fringes in optical cone coupling devices, a direct coupling process is proposed to make ICCD/ICMOS. The large-size ICMOS developed in this study can obtain more information in the field of view. The resolution of the entire device is up to 3600×1800, the picture is clear, there is no obvious moiré fringe, and the structure is compact. The entire device has the size of a handheld digital camera and has strong concealability, which is conducive to obtaining target information more accurately and quickly in a complex environment.
分 类 号:TN223[电子电信—物理电子学] TN206
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