基于耦合机制的AlN晶体生长速率模型  

AlN single crystal growth rate model based on coupled mechanism

作　　者：郭森 张丽[1] GUO Sen;ZHANG Li(The 46th Research Institute of China Electronic Technology Group Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子元件与材料》2021年第6期553-558,共6页Electronic Components And Materials

基　　金：国家重点研发计划(2017YFB0404103,2017YFB0404200)。

摘　　要：在耦合传热和物质传输两种机制的基础上建立了物理气相传输法AlN晶体生长速率模型。当生长压力为30,60,90 kPa时,生长速率模型计算结果和实验结果的偏差值均在20μm/h以内。尤其是当压力为60 kPa时,偏差值为-8μm/h。在此基础上进一步计算了不同工艺参数对生长速率和生长表面形状的影响。结果表明,随着生长压力的增高和籽晶温度的降低,晶体的生长速率越小,晶体生长表面的形状越平。增加多晶源-籽晶的温差可以提高生长速率,而对生长表面形状的影响较小。该生长速率模型的建立可以有效地指导较大生长速率和微凸生长表面的AlN晶体生长,对高结晶质量AlN晶体生长具有重要意义。AlN single crystal growth rate model was established,which was coupled with the mechanism of heat transfer and mass transfer.The calculated and experimental growth rates under three growth pressures(30 kPa,60 kPa and 90 kPa)were compared,and the deviation were less than 20μm/h.Specifically,it was only-8μm/h when the growth pressure was 60 kPa.The impact of the growth parameters(pressure,seed temperature and source temperature)on the growth rates as well as growth surface profiles was discussed.If the growth pressure increases or the seed temperature reduces,the growth rate declines and the growth surface becomes more flat.If the source temperature is raised,the temperature gradient becomes larger,the growth rate increases.However,the variation of the source temperature has little impact on the growth surface profile.This AlN single crystal growth rate model will guide the growth of AlN single crystal with higher growth rate and slightly convex growth surface,which is significant for high quality crystal growth.

关 键 词：AlN晶体 计算机模拟 耦合机制 生长速率 工艺参数 

分 类 号：TN304.23[电子电信—物理电子学] TN304.02