Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness  

作　　者：Jie Xu Nai-Long He Hai-Lian Liang Sen Zhang Yu-De Jiang Xiao-Feng Gu 许杰;何乃龙;梁海莲;张森;姜玉德;顾晓峰(Engineering Research Center of IoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China;Technology Development Department,CSMC Technologies Corporation,Wuxi 214061,China)

机构地区：[1]Engineering Research Center of IoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China [2]Technology Development Department,CSMC Technologies Corporation,Wuxi 214061,China

出　　处：《Chinese Physics B》2021年第6期516-520,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 61504049);the China Postdoctoral Science Foundation (Grant No. 2016M600361);the Fundamental Research Funds for the Central Universities,China (Grant No. JUSRP51510)。

摘　　要：A novel terminal-optimized triple RESURF LDMOS(TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolarCMOS-DMOS(BCD) process. By introducing a low concentration region to the terminal region, the surface electric field of the TOTR-LDMOS decreases, helping to improve the breakdown voltage(BV) and electrostatic discharge(ESD) robustness. Both traditional LDMOS and TOTR-LDMOS are fabricated and investigated by transmission line pulse(TLP) tests,direct current(DC) tests, and TCAD simulations. The results show that comparing with the traditional LDMOS, the BV of the TOTR-LDMOS increases from 755 V to 817 V without affecting the specific on-resistance(R_(on,sp)) of 6.99Ω·mm^(2).Meanwhile, the ESD robustness of the TOTR-LDMOS increases by 147%. The TOTR-LDMOS exhibits an excellent performance among the present 700-V LDMOS devices.

关 键 词：lateral double-diffused MOSFET(LDMOS) terminal-optimization breakdown voltage electrostatic discharge 

分 类 号：TN386.1[电子电信—物理电子学]