Effects of post-annealing on crystalline and transport properties of Bi_(2)Te_(3) thin films  

作　　者：Qi-Xun Guo Zhong-Xu Ren Yi-Ya Huang Zhi-Chao Zheng Xue-Min Wang Wei He Zhen-Dong Zhu Jiao Teng 郭奇勋;任中旭;黄意雅;郑志超;王学敏;何为;朱振东;滕蛟(Department of Material Physics and Chemistry,University of Science and Technology Beijing,Beijing 100083,China;Collaborative Innovation Center of Advanced Steel Technology,University of Science and Technology Beijing,Beijing 100083,China;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;National Institute of Metrology,Beijing 100029,China)

机构地区：[1]Department of Material Physics and Chemistry,University of Science and Technology Beijing,Beijing 100083,China [2]Collaborative Innovation Center of Advanced Steel Technology,University of Science and Technology Beijing,Beijing 100083,China [3]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [4]National Institute of Metrology,Beijing 100029,China

出　　处：《Chinese Physics B》2021年第6期536-540,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 52072030, 52071025, and 51871018);the Beijing Outstanding Young Scientists Projects (Grant No. BJJWZYJH01201910005018);Beijing Natural Science Foundation,China (Grant No. Z180014);the Science and Technology Innovation Team Program of Foshan (Grant No. FSOAA-KJ919-4402-0087);Beijing Laboratory of Metallic Materials and Processing for Modern Transportation。

摘　　要：A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi_(2) Te_(3) films with the carrier density down to 4.0 × 10^(13) cm^(-2). In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi_(2) Te_(3) thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi_(2) Te_(3) thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length(~ 228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi_(2) Te_(3) thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.

关 键 词：topological insulator magnetron sputtering post annealing Kiessig fringes low carrier density weak antilocalization 

分 类 号：O484.4[理学—固体物理]