新型磁电阻探索与多态数据存储应用  

Novel magnetoresistance explorations and multistate data storage applications

作　　者：田玉峰[1] 柏利慧 康仕寿 陈延学[1] 刘国磊[1] 梅良模[1] 颜世申[1,2] Yufeng Tian;Lihui Bai;Shishou Kang;Yanxue Chen;Guolei Liu;Liangmo Mei;Shishen Yan(School of Physics,Shandong University,Jinan 250100,China;School of Physics&Electronic Engineering,Kashgar University,Kashi 844006,China)

机构地区：[1]山东大学物理学院,济南250100 [2]喀什大学物理与电气工程学院,喀什844006

出　　处：《科学通报》2021年第16期2071-2084,共14页Chinese Science Bulletin

基　　金：国家自然科学基金(11774016,11774199,51871112);高等学校学科创新引智计划(B13029)资助。

摘　　要：随着现代信息存储与通信技术的快速发展,人们希望新型的电子器件能兼具低功耗、非易失、高密度等优异性能,甚至能实现信息的存储、处理与通信三位一体的功能,因而对材料和器件的研究提出了巨大的挑战.为满足上述需求,我们课题组一方面在多种新材料和器件中探索新的磁电阻效应,深入理解自旋相关输运的物理机理,进而获得有效调控自旋相关输运的新途径;另一方面,基于多物理效应调控材料和器件的磁电阻,进而获得可用于多态信息存储的自旋电子学原型器件.在新型磁电阻探索方面,本文将介绍非晶浓磁半导体的负磁电阻、单晶CoZnO磁性半导体硬带跃迁区的正磁电阻、非磁肖特基异质结中的新型整流磁电阻以及非对称势垒磁性隧道结中的隧穿整流磁电阻.在多态数据存储方面,本文将介绍氧化物异质结中可用电磁场调控的4电阻态、磁性异质结中基于剩磁调控的10电阻态以及磁性单层膜中基于自旋轨道矩效应的10电阻态.Novel spintronic devices with low power consumption,nonvolatility,and high storage density are highly desired to meet the rapid development of modern information storage and communication technology,which poses a great challenge to both material and device researches.To overcome this challenge,our group has focused our research on the following two aspects.On one hand,we have explored novel magnetoresistance effects in a variety of materials and devices,aiming to get a deep understanding about the spin dependent transport and obtain an effective control of spin-dependent transport.On the other hand,we have tried to control the magnetoresistance based on multi-physical field effects,aiming to obtain spintronic prototype devices that can be used for multi-state data storage.Regarding the novel magnetoresistance explorations,this article will introduce:(1)The negative magnetoresistance in amorphous condensed magnetic semiconductors.The spin dependent variable range hopping model is proposed,which can quantitatively explain the temperature and magnetic field dependent transport behavior in the condensed magnetic semiconductors.In addition,this model provides an alternative way to detect the spin polarization ratio of the magnetic semiconductors.(2)The positive magnetoresistance in single-crystal CoZnO magnetic semiconductors.By quantitative analysis of the transport properties of CoZnO films,it is observed that the positive magnetoresistance in the"hard gap"regime is the result of the carrier wavefunction shrinkage under applied magnetic field.(3)The rectification magnetoresistance in non-magnetic Schottky heterojunctions and the tunneling rectification magnetoresistance in magnetic tunnel junctions.A brand new rectification magnetoresistance is observed in nonmagnetic Al/Ge Schottky heterojunctions:The application of a pure small sinusoidal alternating current to the nonmagnetic Schottky heterojunctions can generate a significant direct-current voltage,and this rectification voltage strongly varies with the external

关 键 词：磁电阻 多态数据存储 自旋电子学 磁性异质结 自旋相关输运 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O469[自动化与计算机技术—计算机科学与技术]