改进型自偏置带隙基准源电路设计  

Desiqn of an improved self biased bandgap reference circuit

作　　者：谭传武[1] 傅宗纯[1] TAN Chuanwu;FU Zongchun(Department of Communication and Signal,Hunan Railway Professional Technology College,Zhuzhou 412001,China)

机构地区：[1]湖南铁道职业技术学院电务学院,湖南株洲412001

出　　处：《电子设计工程》2021年第13期47-50,共4页Electronic Design Engineering

基　　金：湖南省自然科学基金项目(2020JJ7052);湖南省教育厅科学研究项目(19B380)。

摘　　要：随着5G移动通信技术的不断发展,基站节能成为了新的主题,电源管理芯片就是管理终端功耗的关键器件,该文改进了传统的带隙基准源电路结构,设计了一种能用于电源管理芯片中的结构简单、低功耗自偏置基准源电路。该电路结构由一对宽长比为8∶4的PNP管构成带隙核心电路,与运放构成负反馈结构,由一个MOS管构成的偏置电路由带隙输出提供电压偏置,该电路结构共有一个MOS管、3个PNP管及一个运放,有源器件少、功耗低。仿真结果表明,带隙输出电压VREF为1.18 V,温度系数为5.45 ppm/℃,电源抑制比达95 dB以上。With the continuous development of 5 G and other mobile communication technologies,base station energy saving has become a new topic.Power management chip is the key device to manage terminal power consumption.This paper improves the traditional bandgap reference circuit structure,and designs a high stability,low power self bias reference circuit which can be used in power management chip.The circuit structure consists of a pair of 8∶4 size PNP tubes as the bandgap core circuit and a negative feedback structure with the op amp.The bias circuit composed of one MOS tube is provided with voltage bias by the band gap output.The circuit structure consists of one MOS tube,three PNP tubes and one op amp.The active device has low power consumption.The simulation results show that the output voltage VREF is 1.18 V,the temperature coefficient is 5.45 ppm/℃,and the power rejection ratio is 95 dB.

关 键 词：电源管理 带隙基准源 MOS 5G 

分 类 号：TN433[电子电信—微电子学与固体电子学]