室温下用脉冲激光沉积E-BN薄膜  

PULSED LASER DEPOSITION OF EXPLOSION BORON NITRIDE AT AMBIENT TEMPERATURE

作　　者：任志昂[1] 张灿云[1] 钟向丽[1] 王金斌[1] 杨国伟[1] 

机构地区：[1]湘潭大学物理系,湖南湘潭411105

出　　处：《高压物理学报》2002年第4期297-300,共4页Chinese Journal of High Pressure Physics

基　　金：湖南省教育厅资助 (0 1C0 6 1)

摘　　要：在利用等离子体增强脉冲激光沉积系统沉积立方氮化硼 (cBN)薄膜时 ,发现了氮化硼 (BN)材料的E BN相 ,并利用扫描电镜和红外吸收光谱及X射线衍射技术对薄膜样品进行了分析 ,得到了制备较高质量E BN薄膜的一些热力学参数及时间参数 ,验证了现有的E BN结构的形成理论。In this study,explosion boron nitride (E-BN) was found in the process of depositing cubic boron nitride (cBN) thin film by Plasma Enhanced Pulsed Laser Deposition (PEPLD) method at room temperature.The E-BN thin film was identified using SEM,FTIR and X-ray diffraction techniques.The thermodynamic parameters and time parameter for preparing high-quality E-BN thin film were obtained. This has supported the existing formation theory of the structure of E-BN.

关 键 词：室温 E-BN薄膜 脉冲激光沉积 扫描电镜 红外吸收光谱 X射线衍射 氮化硼 分子晶体 

分 类 号：O484.1[理学—固体物理] O78[理学—物理]