无参数忆阻系统的平面偏置控制共存分岔研究  

Plane Offset-Boosted Coexisting Bifurcations in No-Argument Memristive System

作　　者：张希[1] 罗姣燕 武花干[1] 包伯成[1] ZHANG Xi;LUO Jiaoyan;WU Huagan;BAO Bocheng(School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China)

机构地区：[1]常州大学微电子与控制工程学院,江苏常州213164

出　　处：《常州大学学报（自然科学版）》2021年第4期41-48,共8页Journal of Changzhou University：Natural Science Edition

基　　金：国家自然科学基金资助项目(51607013)。

摘　　要：初值依赖的超级多稳定性和偏置控制的共存吸引子近年来得到学者们的广泛关注。通过在三维线性耗散系统中引入2个具有正弦忆导的忆阻元件,构建了一种新颖的、有着平面平衡点的五维忆阻动力学系统。借助理论分析和数值计算,发现忆阻初值控制的平面共存分岔现象,并揭示了忆阻初值依赖的超级多稳定性。设计了该忆阻动力学系统的模拟电路,并由PSIM电路仿真验证了平面偏置控制的共存行为。Initial-dependent extreme multi-stability and offset-boosted coexisting attractors have been significantly concerned recently.This paper constructs a novel five-dimensional memristive dynamical system with plane equilibrium via introducing two memristors with sine memductance into a three-dimensional linear dissipative system.According to theoretical analyses and numerical plots,the memristor initial-boosted coexisting plane bifurcations are found and the memristor initial-dependent extreme multi-stability is revealed.Besides,an analog circuit is designed for the presented memristive dynamical system and PSIM circuit simulations validate the plane offset-boosted coexisting behaviors.

关 键 词：忆阻系统 忆阻初值 共存平面分岔 超级多稳定性 

分 类 号：O41[理学—理论物理]