AgInSbTe薄膜的短波长记录性能分析  

Analysis of Short-Wavelength Recording Properties of AgInSbTe Thin Films

作　　者：魏劲松[1] 阮昊[1] 陈仲裕[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《光学学报》2002年第11期1281-1285,共5页Acta Optica Sinica

基　　金：国家自然科学基金重点项目 (5 9832 0 6 0 );国家基础研究973项目;上海市应用物理研究中心资助课题

摘　　要：采用自制的装置研究了Ag5In5Sb47Te3 3 薄膜的静态记录性能与记录激光的功率和脉冲宽度的关系 ,并对其记录畴形貌特点进行了直接观察。结果表明只有记录激光的功率和脉冲宽度在一定范围之内才能起到信息记录的作用 ,所得的记录畴形貌十分清晰 ,基本为非晶态Ag5In5Sb47Te3 3 ;小于该范围的激光能量不能使材料结构发生较大的变化 ,所得的记录畴形貌模糊 ,反射率对比度低于 2 % ;大于该范围所得的记录畴由烧蚀区和其周围的非晶态Ag5In5Sb47Te3 3 组成。另外 ,得到了记录激光功率为 12mW、脉冲宽度为 90ns的Ag5In5Sb47Te3 3 薄膜的短波长最佳记录条件 ,其记录畴的反射率对比度为 2 2 % ,直径为 380nm～ 4 0 0nm。The relationships between the recording properties and the recording laser power and pulse width of the Ag5In5Sb47Te33 thin films were investigated and the recording domain morphology was observed. The results show that the recording domains is obtained when the recording laser power and pulse width within a certain range, and the morphology of the recording domains is very clear and is amorphous Ag5In5 Sb47Te33. When the laser power and pulse width could not provide efficient energy to induce significant change in the films, the morphology of the recording domains is very illegible. When the ablation took place the recording domains were composed of the ablation area and the surrounding amorphous Ag5In5 Sb47Te33. In addition, the optimum recording conditions (12 mW recording power and the 90 ns laser pulse width) were obtained, the reflectivity contrast of the recording domains obtained under the condition is 22% and the domain diameter is 380 nm - 400 nm.

关 键 词：短波长 AgInSbTe薄膜 记录畴 记录性能 信息存储 记录激光 可擦写光盘 

分 类 号：O484.41[理学—固体物理] TQ59[理学—物理]