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作 者:李劲卓 刘峰 方志 Li Jinzhuo;Liu Feng;Fang Zhi(School of Electrical Engineering and Control Science Nanjing Tech University,Nanjing 211816 China)
机构地区:[1]南京工业大学电气工程与控制科学学院,南京211816
出 处:《电工技术学报》2021年第13期2675-2683,2696,共10页Transactions of China Electrotechnical Society
基 金:国家自然科学基金(51677083,52037004);江苏省“六大人才高峰”创新人才团队项目(TD-JNHB-006)。
摘 要:通过在放电气体中添加含Si媒质可在材料表面引入含Si基团,能有效提高等离子体憎水改性效果,增强材料沿面耐压能力。该文选取六甲基二硅醚(HMDSO)为含Si媒质,采用纳秒脉冲激励在Ar/HMDSO中产生射流放电,通过电压电流波形测量等电气特性,发光图像、发射光谱及ICCD等光学特性诊断,研究了HMDSO含量对放电特性的影响,得到等离子体羽长度、放电功率、传输电荷、主要粒子谱线强度及电离波传播等参量随HMDSO含量的变化趋势,并结合放电电离反应及动态发展过程进行分析。结果表明,少量HMDSO的引入对放电有促进作用,体现在随添加含量的增加,射流体羽长度变长,注入功率和传输电荷量提高、主要粒子谱线强度增强,电离波传播速度和距离提升。这些参量在HMDSO体积分数为0.04%时达到最大值,当HMDSO体积分数大于0.04%时,放电强度开始减弱,表现在相关参量随HMDSO含量的增加而降低。HMDSO参与放电中直接电离反应及与Ar激励态反应,这两种反应的竞争是导致其对放电特性影响存在极值的原因。Adding Si-containing precursors to the discharge gas can introduce Si-containing groups on the surface of the materials and effectively improve the surface hydrophobicity by plasma treatment,which is important for the improvement of the surface insulating performance of insulators.In this paper,hexamethyldisiloxane(HMDSO)was selected as the Si-containing precursors,and ns pulse excitation was used to generate jet discharges in Ar/HMDSO.The influences of HMDSO ratio on the discharge characteristics were studied by diagnosing the electrical characteristics(voltage and current measurements,etc.)and optical characteristics(discharge images,emission spectra and ICCD measurements).The variations of plasma plume length,discharge power,transported charge,spectral line intensity of main particles and ionization wave propagation with HMDSO ratio were obtained and further analyzed in combination with the discharge ionization reaction and dynamic development process.The results show that the introduction of a small amount of HMDSO promotes the discharge by the increasing of the length of the jet plume,injection power,transported charge,intensity of the main particle line,ionization wave propagation speed and distance.Those parameters reach the maximum values at 0.04%HMDSO.When the HMDSO content is greater than 0.04%,the discharge is weakened and the corresponding parameters decrease with the increase of the HMDSO ratio.The competition of the direct ionization reaction of HMDSO and the reaction of HMDSO with Ar excited states are the reason for the maximum values of the parameters existing in the studied range of HMDSO addition.
关 键 词:等离子体射流 Ar/HMDSO 纳秒脉冲 憎水性 放电特性 表面改性
分 类 号:TM213[一般工业技术—材料科学与工程]
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