Polarization assisted self-powered GaN-based UV photodetector with high responsivity  被引量:2

在线阅读下载全文

作  者:JIAXING WANG CHUNSHUANG CHU KANGKAI TIAN JIAMANG CHE HUA SHAO YONGHUI ZHANG KE JIANG ZI-HUI ZHANG XIAOJUAN SUN DABING LI 

机构地区:[1]State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300401,China [2]Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China [3]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

出  处:《Photonics Research》2021年第5期734-740,共7页光子学研究(英文版)

基  金:State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology(EERI_PI2020008);National Natural Science Foundation of China(61725403,61922978,62074050)。

摘  要:In this work, a self-powered GaN-based metal-semiconductor-metal photodetector(MSM PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms an asymmetric feature by using the polarization effect under one electrode, such that we adopt an AlGaN/GaN heterojunction to produce the electric field,and by doing so, an asymmetric energy band between the two electrodes can be obtained even when the device is unbiased. The asymmetric feature is proven by generating the asymmetric current-voltage characteristics both in the dark and the illumination conditions. Our results show that the asymmetric energy band enables the selfpowered PD, and the peak responsivity wavelength is 240 nm with the responsivity of 0.005 A/W. Moreover, a high responsivity of 13.56 A/W at the applied bias of 3 V is also achieved. Thanks to the very strong electric field in the charge transport region, when compared to the symmetric MSM PD, the proposed MSM PD can reach an increased photocurrent of 100 times larger than that for the conventional PD, even if the illumination intensity for the light source becomes increased.

关 键 词:RESPONSIVITY POLARIZATION HETEROJUNCTION 

分 类 号:TN23[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象