一种基于电流差值的低工艺漂移的BiCMOS过温保护电路  

BiCMOS over temperature protection circuit with low process drift based on current difference

作　　者：张洪凯 王立新[1] 陈润泽 郭敏 ZHANG Hongkai;WANG Lixin;CHEN Runze;GUO Min(Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100124,China;Beijing University of Technology,Beijing 100124,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049 [3]北京工业大学,北京100124

出　　处：《微电子学与计算机》2021年第7期7-12,共6页Microelectronics & Computer

摘　　要：过温保护电路是功率集成电路中一个重要的功能模块.本文设计了基于电流差值的过温保护电路,基于XFAB0.6μm BCD工艺,完成了全工艺角模拟仿真.在100多个工艺角下的仿真结果表明:基于电流差值的过温保护电路过温关断阈值点和过温恢复阈值点的波动相比于传统的电压型结构的过温保护电路减小了50%以上,表明提出的基于电流差值的过温保护电路具有低工艺漂移的特性.Over-temperature protection(OTP)circuit is an important function module in power integrated circuit.An OTP circuit based on current difference is designedin this paper.Based on the XFAB 0.6μm BCD process,the over-temperature protection circuit is simulated under more than 100 process corners.The simulation results show that the fluctuation of over temperature turn-off and restart threshold points are both reduced by more than 50%,compared with the conventional over temperature protection circuit with voltage structure,indicating that the proposed OTP circuit has the characteristics of low process drift.

关 键 词：低工艺漂移 过温保护 BCD工艺 温度阈值 

分 类 号：TN433[电子电信—微电子学与固体电子学]