双沟道纳米场效应晶体管设计和pH传感器的实现  

Design of Dual Channel Nanostructured Field Effect Transistor and Implementation of pH Sensor

作　　者：吴传健 王轶卿 杨敏 WU Chuanjian;WANG Yiqing;YANG Min(College of Electrical Engineer and Control Science,Nanjing Technology University,Nanjing 211816,China)

机构地区：[1]南京工业大学电气工程与控制科学学院,江苏南京211816

出　　处：《山西大学学报（自然科学版）》2021年第3期523-530,共8页Journal of Shanxi University(Natural Science Edition)

基　　金：江苏省自然科学基金(BK20180687);江苏省研究生科研与实践创新计划项目(SJCX20_0348)。

摘　　要：基于纳米结构离子敏场效应晶体管构造的pH传感器具有微型化、响应快速以及灵敏度高等优势,在生物标志物检测、食品安全检测以及生物医学等领域应用广泛。文章首先基于Silvaco TCAD仿真器,设计了双沟道纳米结构的场效应晶体管,分析了栅介质材料、沟道材料和沟道厚度等结构参数对晶体管电学特性的影响规律,基于仿真结果确定选用栅介质层和沟道层材料,设定了双沟道结构的场效应晶体管的结构和参数。该设计有效降低亚阈值摆幅,并提高开关电流比。最后,依据仿真结果,基于纳米结构离子敏场效应晶体管制备了pH传感器,通过实验测量器件的输出特性、转移特性和pH特性,验证了器件仿真结果的准确性。结果表明,该pH传感器灵敏度可达(70±5)mV/pH。The pH sensor based on nanostructured ion-sensitive field effect transistor has advantages such as miniaturizations, fast responses and high sensitivities,and it has been widely used in biomarker detection, food safety monitoring and biomedical science. A nanostructured ion-sensitive field effect transistor with dual channel was designed based on the SILVACO TCAD simulator. We analyzed the effects of gate dielectric material, channel material and channel thickness on the electrical characteristics of nanostructured field-effect transistor. Morever, relying on simulation results, the materials of gate dielectric layer and channel layer were selected.The structure and parameters of dual channel FET were set. The structure can reduce the subthreshold swing and increase the switching current ratio. According to the simulation results, a pH sensor based on nanostructured ion-sensitive field-effect transistor was fabricated. The accuracy of the simulation results was verified by measuring the output characteristics, transfer characteristics and pH characteristics of the device. The results showed that the pH sensitivity can reach(70 ± 5) mV/pH.

关 键 词：离子敏场效应晶体管 双沟道纳米结构 pH灵敏度 

分 类 号：O510.30[理学—低温物理]