Pb掺杂对SPS制备半导体用Mg_(3)Sb_(2)材料结构及热电性能的影响  被引量:1

Effect of Pb doping on the structure and thermoelectric properties of Mg_(3)Sb_(2) prepared by SPS

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作  者:翟秀丽[1] 辛运霞 ZHAI Xiuli;XIN Yunxia(Electronic Information Department,Xinxiang Vocational and Technical College,Xinxiang 453006,China;School of Information Engineering,North China University ofWater Resources and Hydropower,Zhengzhou 450046,China)

机构地区:[1]新乡职业技术学院电子信息系,河南新乡453006 [2]华北水利水电大学信息工程学院,河南郑州450046

出  处:《粉末冶金工业》2021年第3期45-49,共5页Powder Metallurgy Industry

基  金:国家自然科学基金资助(61205058,61331008);河南省教育厅项目资助(13B510401)。

摘  要:选择半导体用Mg_(3)Sb_(2)作为测试基材,通过Pb掺杂制备Mg_(3)Sb_(2)Pb_(x)化合物,并分析了Pb掺杂过程引起的载流子有效质量与迁移率的变化。结果表明:Mg_(3)Sb_(2)中的Pb掺杂量为0.02~0.03时较优。Mg_(3)Sb_(2)Pb_(x)试样形成了致密组织,密度达到了理论密度95%以上,形成了相近的断口微观形貌。元素Sb、Mg、Pb都呈均匀分布状态,未发生元素偏聚,可以推断试样各部位的组织成分均匀,具备相近的性能。提高Pb含量后,试样获得了更高电导率,Seebeck系数不断降低。随着Pb掺杂量的增大,材料的载流子迁移率降低。随着温度逐渐升高,试样较未掺杂试样获得了更大的ZT值。掺入Pb改善改善电输运性能,获得更高的ZT值。The Mg_(3)Sb_(2)Pb_(x) compound was prepared by Pb doping with Mg_(3)Sb_(2) and selected as the test substrate for semiconductor, and the changes of carrier effective mass and mobility caused by Pb doping were analyzed. The results show that Pb doping in Mg3Sb2 is better in the range of 0.02-0.03. The Mg_(3)Sb_(2)Pb_(x) samples forms the dense tissue, the density of which reached more than 95% of the theoretical density, and forms similar fracture morphology.Each element of Sb, Mg and Pb presents a uniform distribution state without element partial polymerization, so it can be inferred that the tissue composition of each part of the sample is uniform and has similar properties. After increasing Pb content, the sample obtains higher conductivity and Seebeck coefficient decreases continuously. With the increasing of Pb doping, the carrier mobility of Pb decreases. With the temperature increasing gradually, the sample obtained a larger ZT than it without doping. The addition of Pb can improve the performance of electric transport and obtain higher ZT.

关 键 词:Pb掺杂 放电等离子体烧结 Mg_(3)Sb_(2)材料 微观组织 热电性能 

分 类 号:TN304[电子电信—物理电子学]

 

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