高谐波抑制隔离-滤波集成磁性器件仿真设计  

Simulation design of isolation-filtering integrated magnetic device with high harmonic suppression

作　　者：尹久红[1] 田珺宏 闫欢[1] 韩晓川 胡艺缤 高春燕 赵春美 YIN Jiu-hong;TIAN Jun-hong;YAN Huan;HU Yi-bin;HAN Xiao-chuan;GAO Chun-yan;ZHAO Chun-mei(Southwest Institute of Applied Magnetics,Mianyang 621000,China)

机构地区：[1]西南应用磁学研究所,四川绵阳621000

出　　处：《磁性材料及器件》2021年第3期30-34,共5页Journal of Magnetic Materials and Devices

基　　金：四川省科技计划项目(2019YFG0005)。

摘　　要：针对5G通讯中磁性器件高二次谐波抑制的发展需求,通过对传统滤波器进行分析,结合HFSS电场软件对传统的阶梯阻抗谐振器(SIR)滤波器进行结构优化和仿真分析。在满足小尺寸要求的前提下实现了器件带内、带外优异的微波性能。通过与铁氧体隔离器进行集成优化,最终设计了一款带内频响特性好、带外抑制度高的集成磁性器件。器件实测性能指标满足项目技术要求:带内工作频率:f=24~27.5 GHz,带内回波损耗:≥20 dB,带内隔离度:≥20 dB,带外二次谐波抑制:≥35 dB。Aiming at magnetic device in 5G communication requirement for high harmonic suppression,through the analysis on the traditional filter,using electric field software HFSS,the traditional SIR filter structure was optimized.On the premise of meeting the requirements for small size in-band and out-band excellent microwave performance was realized.Through the integrated optimization with ferrite isolator,finally an integrated device was designed with good in-band frequency response and high out-band suppression.The device was designed featuring working frequency f=24-27.5 GHz,in-band return loss≥20 dB and isolation:≥20 dB,out-band second harmonic suppression:≥35 dB.

关 键 词：隔离-滤波集成磁性器件 微带隔离器 滤波器 二次谐波抑制 仿真设计 

分 类 号：TN627[电子电信—电路与系统] TN713