透明导电薄膜(Ⅰ):掺杂透明导电氧化物薄膜  

Transparent conductive film(Ⅰ)--Doped transparent conductive oxide film

作　　者：闫彩波 周艳文[1] 王鼎 YAN Caibo;ZHOU Yanwen;WANG Ding(School of Materials and Metallurgy,University of Science and Technology Liaoning,Anshan 114051,China)

机构地区：[1]辽宁科技大学材料与冶金学院,辽宁鞍山114051

出　　处：《辽宁科技大学学报》2021年第2期99-106,110,共9页Journal of University of Science and Technology Liaoning

基　　金：国家自然科学基金(51972155、51672119、51372109、51172101、50872048);辽宁科技大学大学生创新创业训练计划(202010146001S)。

摘　　要：透明导电氧化物薄膜具有良好的光电性能。作为前电极,此类半导体材料薄膜广泛应用于半导体器件。本文以典型的掺杂TCO薄膜为切入点,综述了透明导电氧化物薄膜的发展历史及应用,重点阐述了几种典型掺杂TCO薄膜的结构特征、光电特性、制备方法及应用展望。Transparent conductive oxide films have good photoelectric properties.As a front electrode,this kind of semiconductor thin film is widely used in semiconductor devices.In this paper,the development history and application of transparent conductive oxide thin films are reviewed with the starting point of typical doped TCO thin films.The structural characteristics,photoelectric properties,preparation methods,and application prospects of several typical doped TCO thin films are emphatically described.

关 键 词：透明导电氧化物薄膜 掺杂 结构特征 光电性能 制备方法 

分 类 号：TB303[一般工业技术—材料科学与工程]